Anna Malmros

Forskningsingenjör at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Projects

2014–2018

Bridging the THz-gap

Herbert Zirath Microwave Electronics
Niklas Rorsman Microwave Electronics
Tommy Ive Photonics
Anna Malmros Microwave Electronics
Knut and Alice Wallenberg Foundation

There might be more projects where Anna Malmros participates, but you have to be logged in as a Chalmers employee to see them.

Publications

2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Journal article
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Journal article
2015

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi Ngoc Do Thanh, Anna Malmros, P. Gamarra et al
IEEE Electron Device Letters. Vol. 36 (4), p. 315-317
Journal article
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
Paper in proceedings
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Johan Bergsten, Anna Malmros, M. Tordjman et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Journal article
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper in proceedings
2012

Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros, Kristoffer Andersson, Niklas Rorsman
Thin Solid Films. Vol. 520 (6), p. 2162-2165
Journal article
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
Journal of Logic and Computation
Paper in proceedings
2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Journal article
2011

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Anna Malmros, H. Blanck, Niklas Rorsman
Semiconductor Science and Technology. Vol. 26 (7)
Journal article
2010

TiN thin film resistors for monolithic microwave integrated circuits

Anna Malmros, Mattias Sudow, Kristoffer Andersson et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 28 (5), p. 912-915
Journal article
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper in proceedings
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper in proceedings
2007

Cryogenic X-Band Low Noise Amplifiers

Naiara Goia, Matthew Kelly, Anna Malmros et al
Paper in proceedings
2006

Noise optimization of InP HEMTs

Mikael Malmkvist, Anna Malmros, Niklas Wadefalk et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. 97-99
Paper in proceedings
2005

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Anna Malmros, Piotr Starski, Jan Grahn
Proceed. GigaHertz 2005 conference, p. 266-269
Conference contribution
2005

Crygenically Cooled 8.4-8.5 GHz Low Noise Amplifiers

Naiara Goia, Matthew Kelly, Anna Malmros et al
Conference contribution
2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Jan Grahn, Piotr Starski, Mikael Malmkvist et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128
Paper in proceedings