Anna Malmros
Showing 28 publications
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Combined TiN- and TaN temperature compensated thin film resistors
Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies
TiN thin film resistors for monolithic microwave integrated circuits
Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs
GaN Device and MMIC development at Chalmers
Cryogenic X-Band Low Noise Amplifiers
Noise optimization of InP HEMTs
Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
Crygenically Cooled 8.4-8.5 GHz Low Noise Amplifiers
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