Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
Paper in proceeding, 2015
Trapping
current collapse
AlGaN/GaN high-electron-mobility transistors
passivation
Author
Tongde Huang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Olle Axelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sebastian Gustafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Vol. 3 7413558
978-1-4799-8767-2 (ISBN)
Subject Categories
Telecommunications
DOI
10.1109/APMC.2015.7413558
ISBN
978-1-4799-8767-2