Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
Paper in proceedings, 2015

A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (<6%). These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have highest output power (2.9 W/mm at 3 GHz).

Trapping

current collapse

AlGaN/GaN high-electron-mobility transistors

passivation

Author

Tongde Huang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Olle Axelsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anna Malmros

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sebastian Gustafsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3

7413558

Subject Categories

Telecommunications

DOI

10.1109/APMC.2015.7413558

ISBN

978-1-4799-8767-2

More information

Created

10/7/2017