Niklas Rorsman

Forskare at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Projects

2012–2017

The Swedish Graphene Initiative

Mikael Fogelström Applied Quantum Physics
Floriana Lombardi Quantum Device Physics
Avgust Yurgens Quantum Device Physics
Herbert Zirath Microwave Electronics
Jan Stake Terahertz and Millimetre Wave Laboratory
Elsebeth Schröder Quantum Device Physics
Jari Kinaret Condensed Matter Theory
Sergey Kubatkin Quantum Device Physics
Tomas Löfwander Applied Quantum Physics
Eva Olsson Eva Olsson Group
Andreas Isacsson Condensed Matter Theory
Niklas Rorsman Microwave Electronics
Knut and Alice Wallenberg Foundation

2016–2017

Compact Millimeter Wave Integration Concept for Future Wireless and Sensor Systems

Christian Fager Microwave Electronics
Niklas Rorsman Microwave Electronics
Mattias Thorsell Microwave Electronics
Koen Buisman Microwave Electronics
VINNOVA

2013–2017

Energy efficient millimeter wave transmitters

Christian Fager Microwave Electronics
Niklas Rorsman Microwave Electronics
Dan Kuylenstierna Microwave Electronics
William Hallberg Microwave Electronics
Herbert Zirath Microwave Electronics
Mattias Thorsell Microwave Electronics
VINNOVA

2011–2016

III-Nitrides-based electronics for future microwave systems

Niklas Rorsman Microwave Electronics
Herbert Zirath Microwave Electronics
Swedish Foundation for Strategic Research (SSF)

2014–2017

HPM-skydd av AESA baserat på GaN

Niklas Rorsman Microwave Electronics
VINNOVA

2014–2018

Bridging the THz-gap

Herbert Zirath Microwave Electronics
Niklas Rorsman Microwave Electronics
Tommy Ive Photonics
Anna Malmros Microwave Electronics
Knut and Alice Wallenberg Foundation

2014–2017

Indium Nitride-Based Electronics for Millimeterwave and Terahertz Communication and Sensing Applications

Niklas Rorsman Microwave Electronics
Tommy Ive Photonics
Swedish Research Council (VR)

There might be more projects where Niklas Rorsman participates, but you have to be logged in as a Chalmers employee to see them.

Publications

2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Olle Axelsson, Johan Bergsten, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article
2017

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

Michael Winters, V. Panchal, C. E. Giusca et al
Nanoscale. Vol. 9 (10), p. 3440-3448
Journal article
2017

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

Paul J. Tasker, H. Hirshy, Johan Bergsten et al
Microelectronics and Reliability. Vol. 68, p. 2-4
Journal article
2017

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

E. Guerriero, A. Behnam, Omid Habibpour et al
Scientific Reports. Vol. 7 (1), p. Article Number: 2419-
Journal article
2017

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Herbert Zirath, Niklas Rorsman, Wlodek Strupinski et al
Scientific Reports. Vol. 7, p. 41828-
Journal article
2017

Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al

Niklas Rorsman, Michael Winters, J. Hassan et al
Materials Science Forum. Vol. 897 MSF, p. 135-138
Paper in proceedings
2017

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Omid Habibpour, Pawel Ciepielewski, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 27 (2), p. 168-170
Journal article
2016

Carbon-doped GaN on SiC materials for low-memory-effect devices

J. T. Chen, O. Kordina, Michael Andersson et al
ECS Transactions. Vol. 75 (12), p. 61-65
Paper in proceedings
2016

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

X. Li, E. Janzen, H. Pedersen et al
Japanese Journal of Applied Physics. Vol. 55 (5)
Journal article
2016

Graphene FET Gigabit On-Off Keying Demodulator at 96 GHz

Omid Habibpour, Niklas Rorsman, Wlodek Strupinski et al
IEEE Electron Device Letters (3), p. 333-336
Journal article
2016

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang, H. Jiang, K. M. Lau et al
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan, p. Article no. 7528722-
Paper in proceedings
2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Dan Kuylenstierna, Niklas Rorsman, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Journal article
2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Niklas Rorsman, Niklas Billström, Olle Axelsson et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Journal article
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Anna Malmros et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Journal article
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Niklas Rorsman, Jörg Splettstoesser, Hervé Blanck et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Journal article
2016

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

W. Strupinski, E. O. Sveinbjornsson, O. Kazakova et al
AIP Advances. Vol. 6 (8)
Journal article
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

M. Tordjman, M. A. di Forte-Poisson, Hans Hjelmgren et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Journal article
2015

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

Herbert Zirath, Michael Winters, J. Hassan et al
Carbon. Vol. 82 (C), p. 12-23
Journal article
2015

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Omid Habibpour, J. Hassan, E. Janzen et al
Carbon. Vol. 81 (1), p. 96-104
Journal article
2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

E. Janzen, Urban Forsberg, Niklas Rorsman et al
Applied Physics Letters. Vol. 107 (26)
Journal article
2015

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

Urban Forsberg, C. Xia, M. Kuball et al
Journal of Crystal Growth. Vol. 428, p. 54-58
Journal article
2015

Hysteresis modeling in graphene field effect transistors

Einar Sveinbjörnsson, Niklas Rorsman, Michael Winters
Journal of Applied Physics. Vol. 117 (7), p. Art. no, 074501-
Journal article
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Sebastian Gustafsson, Johan Bergsten, Mattias Thorsell et al
Paper in proceedings
2015

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi Ngoc Do Thanh, M. A. di Forte-Poisson, Niklas Rorsman et al
IEEE Electron Device Letters. Vol. 36 (4), p. 315-317
Journal article
2015

Graphene self-switching diodes as zero-bias microwave detectors

Per-Åke Nilsson, Jan Grahn, Andreas Westlund et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

Christer Andersson, Cesar Sanchez Perez, MUSTAFA ÖZEN et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 63 (8), p. 2579-2588
Journal article
2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Mattias Thorsell, Niklas Rorsman, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Journal article
2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Mattias Thorsell, Niklas Rorsman, Michael Winters et al
Applied Physics Letters. Vol. 107 (14)
Journal article
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Sebastian Gustafsson, Olle Axelsson, Anna Malmros et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2015

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

J. T. Chen, Johan Bergsten, E. Janzen et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Journal article
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

M. A. di Forte-Poisson, Niklas Rorsman, P. Gamarra et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Journal article
2015

Developing Graphene based MMICs on SiC substrate

Omid Habibpour, Herbert Zirath, Niklas Rorsman
Paper in proceedings
2015

Graphene self-switching diodes as zero-bias microwave detectors

Jan Grahn, Per-Åke Nilsson, Andreas Westlund et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

Errautm: "graphene self-switching diodes as zero-bias microwave detectors" (Applied Physics Letters (2015) 106 (093116)

Per-Åke Nilsson, Andreas Westlund, J. Hassan et al
Applied Physics Letters. Vol. 106 (15)
Journal article
2014

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

Mikael Hörberg, MUSTAFA ÖZEN, Iltcho Angelov et al
IEEE Microwave and Wireless Components Letters. Vol. 24 (6), p. 412-414
Journal article
2014

Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

Niklas Rorsman, Michael Winters, E. O. Sveinbjornsson et al
Materials Science Forum. Vol. 778-780, p. 1146-1149
Paper in proceedings
2014

High gain graphene field effect transistors for wideband amplifiers

Michael Winters, Herbert Zirath, Niklas Rorsman et al
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014, p. 371-373
Paper in proceedings
2014

High linearity MMIC power amplifier design with controlled junction temperature

Oliver Silva Barrera, Herbert Zirath, Iltcho Angelov et al
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014, p. Art. no. 6815096-
Paper in proceedings
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, M. Tordjman et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper in proceedings
2013

Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator

Iltcho Angelov, Dan Kuylenstierna, Mikael Hörberg et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (11), p. 3916-3926
Journal article
2013

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

David Gustafsson, Jessica Chani Cahuana, Dan Kuylenstierna et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 922-930
Journal article
2013

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

E. Janzen, Mattias Thorsell, Niklas Rorsman et al
Materials Science Forum. Vol. 740-742, p. 129-132
Paper in proceedings
2013

Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization

J. T. Chen, M. Kuball, E. Janzen et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2013

A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation

Eigo Kuwata, Christer Andersson, Yoshihito Hirano et al
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 7-10 October 2013, p. 283-286
Paper in proceedings
2013

Thermal conductivity of isotopically enriched silicon carbide

I.G. IVanov, O. Kordina, M. Yazdanfar et al
THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings, p. 58-61
Paper in proceedings
2013

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Herbert Zirath, Niklas Rorsman, Michael Winters et al
Journal of Applied Physics. Vol. 113 (19)
Journal article
2012

Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros, Niklas Rorsman, Kristoffer Andersson
Thin Solid Films. Vol. 520 (6), p. 2162-2165
Journal article
2012

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Niklas Rorsman, E. Janzen, Herbert Zirath et al
IEEE Transactions on Device and Materials Reliability. Vol. 12 (3), p. 538-546
Scientific journal article - non peer reviewed
2012

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Journal article
2012

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

David Gustafsson, Masatoshi Nakayama, Eigo Kuwata et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 60 (12), p. 3778-3786
Journal article
2012

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Koji Yamanaka, Niklas Rorsman, Mattias Thorsell et al
Journal of Logic and Computation
Paper in proceedings
2012

Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading

B. Kim, J. Moon, Niklas Rorsman et al
Journal of Logic and Computation
Paper in proceedings
2011

Epitaxial and Layout Optimization of SiC Microwave Power Varactors

Niklas Henelius, Björn Magnusson, Niklas Rorsman et al
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011), p. 1642-1645
Paper in proceedings
2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Niklas Rorsman, Jan Grahn, Olle Axelsson et al
Paper in proceedings
2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Shiping Guo, Martin Fagerlind, Niklas Rorsman et al
IEEE Electron Device Letters. Vol. 32 (7), p. 889-891
Journal article
2011

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

Niklas Rorsman, Mattias Thorsell, Christer Andersson
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (7), p. 1753-1760
Journal article
2011

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Martin Fagerlind, Niklas Rorsman
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2204-2206
Journal article
2011

High performance GaN front-end MMICs

Niklas Rorsman, Joakim Nilsson, Audun Tengs et al
14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, Manchester, 10 October through 11 October 2011, p. 348-351
Paper in proceedings
2011

Electrothermal Access Resistance Model for GaN-Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Niklas Rorsman et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Journal article
2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

S. Andersson, Niklas Rorsman, Christer Andersson et al
IEEE Electron Device Letters. Vol. 32 (6), p. 788-790
Journal article
2011

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

H. Blanck, Anna Malmros, Niklas Rorsman
Semiconductor Science and Technology. Vol. 26 (7)
Journal article
2011

Optimization of SiC MESFET for high power and high frequency applications

Niclas Ejebjörk, Niklas Rorsman, Björn Magnusson et al
Materials Science Forum. Vol. 679-680, p. 629-632
Paper in proceedings
2011

An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator

Jonathan Felbinger, Niklas Rorsman, Herbert Zirath et al
33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011
Paper in proceedings
2011

High efficiency RF pulse width modulation with tunable load network class-E PA

R. Jos, MUSTAFA ÖZEN, M. P. Van Der Heijden et al
Paper in proceedings
2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

E. Janzen, Niklas Rorsman, Niclas Ejebjörk et al
IEEE Electron Device Letters. Vol. 32 (6), p. 788-790
Journal article
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Niklas Rorsman, Fredrik Allerstam et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Journal article
2010

TiN thin film resistors for monolithic microwave integrated circuits

Kristoffer Andersson, Anna Malmros, Niklas Rorsman et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 28 (5), p. 912-915
Journal article
2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Niklas Rorsman, Mattias Thorsell, Niklas Billström et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Journal article
2010

Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

Herbert Zirath, Niklas Rorsman, R. T. Huang et al
Japanese Journal of Applied Physics. Vol. 49 (2), p. Art. no. 021001-
Journal article
2010

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Niklas Rorsman, Mattias Thorsell, Hans Hjelmgren et al
Conference poster
2009

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Martin Fagerlind, Herbert Zirath, Niklas Rorsman
Semiconductor Science and Technology. Vol. 24 (4), p. 045014-
Journal article
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Sudow, Mattias Thorsell, Niklas Rorsman et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Journal article
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Hans Hjelmgren, Kristoffer Andersson, Per-Åke Nilsson et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Journal article
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Anne Henry, Ulf Gustavsson, Niklas Rorsman et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Journal article
2008

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

Vincent Desmaris, Niklas Rorsman, Herbert Zirath et al
Solid-State Electronics. Vol. 52, p. 632-636
Journal article
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Per-Åke Nilsson, Mattias Sudow, Mattias Thorsell et al
Journal of Logic and Computation, p. 463-466
Paper in proceedings
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Per-Åke Nilsson, Niklas Rorsman, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Niklas Rorsman, Kristoffer Andersson, Einar Sveinbjörnsson et al
GigaHertz Symposium 2008, p. 78-
Paper in proceedings
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Niklas Billström, Mattias Sudow, Kristoffer Andersson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Journal article
2008

GaN Device and MMIC development at Chalmers

Anna Malmros, Niklas Rorsman, Mattias Sudow et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper in proceedings
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Martin Fagerlind, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Journal article
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Einar Sveinbjörnsson, Per-Åke Nilsson, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Journal article
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Niklas Rorsman et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008

Influence of gate position on dispersion characteristics of GaN HEMTs

Niklas Rorsman, Martin Fagerlind, Anelia Kakanakova-Gerorgieva et al
WOCSDICE 2008, Abstract book, p. 99-100
Paper in proceedings
2007

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

Vincent Desmaris, Jin-Yu Shiu, Edward-Yi Chang et al
Semicronductor Science and Technology. Vol. 22, p. 717-721
Journal article
2007

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Niklas Rorsman, Toshiki Makimoto, Edward-Yi Chang et al
IEEE Electron Device Letters. Vol. 28 (6), p. 476-478
Journal article
2007

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Mattias Sudow, Niklas Rorsman, Hans Hjelmgren et al
Solid-State Electronics. Vol. 51 (8), p. 1144-1152
Journal article
2006

A highly linear double balanced Schottky diode S-band mixer

Niklas Rorsman, Per-Åke Nilsson, Mattias Sudow et al
IEEE Microwave and Wireless Components Letters. Vol. 16 (6), p. 336 - 8
Journal article
2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Jan Grahn, Anders Mellberg et al
Solid State Electronics. Vol. 50 (5), p. 858-864
Journal article
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Herbert Zirath et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Journal article
2006

Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs

D Schreuers, Iltcho Angelov, Kristoffer Andersson et al
IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan, p. 279-282
Paper in proceedings
2006

SiC MESFET with a Double Gate Recess

Kristoffer Andersson, Per-Åke Nilsson, Mattias Sudow et al
Materials Science Forum. Vol. 527-529, p. 1227-1230
Paper in proceedings
2006

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers

Paul Hageman, Herbert Zirath, Rik Jos et al
IEEE Transactions on Electron Devices. Vol. 53 (9), p. 2413-17
Journal article
2006

Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Edward-Yi Chang, Jin-Yu Shiu, Herbert Zirath et al
Journal of Applied Physics. Vol. 100 (3), p. 34904-1-4-
Journal article
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Mattias Sudow, Einar Sveinbjörnsson, Hans Hjelmgren et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Journal article
2005

DC and RF performance of MESFET mode 4H-SiC Static Induction transistor

Per-Åke Nilsson, Herbert Zirath, Vincent Desmaris et al
Paper in proceedings
2005

The Chalmers microstrip SiC MMIC Process

Niklas Billström, Johan Ståhl, Mattias Sudow et al
Paper in proceedings
2005

Planar Schottky Microwave Diodes on 4H-SiC

Per-Åke Nilsson, Niklas Rorsman, Herbert Zirath et al
Materials Science Forum. Vol. 483-485, p. 937-940
Paper in proceedings
2005

Fabrication and Characterization of AlGaN/GaN HEMTs

Niklas Rorsman, Vincent Desmaris
Report
2004

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Herbert Zirath, Vincent Desmaris, Joakim Eriksson et al
Materials Science Forum. Vol. 457-460 (2), p. 1629-
Paper in proceedings
2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Herbert Zirath, Mikael Malmkvist, Anders Mellberg et al
16th International Conference on Indium Phosphide and Related Materials, p. 386-388
Paper in proceedings
2004

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Joakim Eriksson, Niklas Rorsman, Vincent Desmaris et al
Electrochemical and Solid-State Letters. Vol. 7 (4), p. G72-
Journal article
2004

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Joakim Eriksson, Niklas Rorsman, Vincent Desmaris et al
Materials Science Forum. Vol. 457-460 (2), p. 1629-
Paper in proceedings
2004

Fabrication and characterization of reactively sputtered TaN thin film resistors for millimeter wave applications

Anders Mellberg, Samuel P. Nicols, Niklas Rorsman et al
Electrochemical and Solid State Letters. Vol. 7 (11), p. G261-3
Journal article
2004

Planar SiC Schottky Diodes for MMIC Applications

Niklas Rorsman, Per-Åke Nilsson, Herbert Zirath et al
Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). Vol. 1, p. 153-156
Journal article
2004

Processing of RF-MEMS Switches

Piotr Starski, Erik Kollberg, Anders Derneryd et al
Paper in proceedings
2004

Cryogenic 2--4 GHz ultra low noise amplifier

Erik Kollberg, Herbert Zirath, Piotr Starski et al
IEEE MTT-S International Microwave Symposium Digest, p. 161-163
Paper in proceedings
2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Niklas Rorsman, Herbert Zirath, Anders Mellberg et al
Proc. 34th European Microwave Conf., p. 171-174
Paper in proceedings
2004

Simple self-aligned fabrication process for silicon carbide static induction transistors

Joakim Eriksson, Vincent Desmaris, Niklas Rorsman et al
Materials Science Forum. Vol. 457-460, p. 1125-
Journal article
2004

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Herbert Zirath, Niklas Rorsman et al
Electrochemical and Solid-State Letters. Vol. 7 (4), p. G72-
Journal article
2003

Research and development of AlGaN/GaN HEMTs

Vincent Desmaris, Herbert Zirath, Joakim Eriksson et al
Paper in proceedings
2003

research and development of SiC Static Induction transistor

Joakim Eriksson, Niklas Rorsman, Kristina Dynefors et al
Conference contribution
2003

C-Band Linear Resistive Wide Bandgap FET Mixers

Joakim Eriksson, Niklas Rorsman, Vincent Desmaris et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2, p. 8-
Paper in proceedings
2002

Resistive SiC-MESFET mixer

Herbert Zirath, Kristoffer Andersson, Joakim Eriksson et al
IEEE Microwave and Wireless Components Letters. Vol. 12 (4), p. 119-121
Journal article
2001

Research and development of AlGaN/GaN HEMTs

Herbert Zirath, Kristina Dynefors, Vincent Desmaris et al
Paper in proceedings
1993

W-band subharmonically pumped resistive mixer based on pseudomorphic heterostructure field effect transistor technology

Christer Karlsson, Iltcho Angelov, Niklas Rorsman et al
Journal of Logic and Computation. Vol. 1, p. 341-344
Paper in proceedings
1993

F-band resistive mixer based on heterostructure field effect transistor technology

Iltcho Angelov, Herbert Zirath, Niklas Rorsman et al
Journal of Logic and Computation. Vol. 2, p. 787-790
Paper in proceedings
1993

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Herbert Zirath, Niklas Rorsman, Shu Min Wang et al
23rd European Solid State Device Research Conference, ESSDERC 1993, p. 765-768
Paper in proceedings
1992

A new empirical nonlinear model for HEMT-devices

Niklas Rorsman, Iltcho Angelov, Herbert Zirath
Journal of Logic and Computation. Vol. 3, p. 1583-1586
Paper in proceedings
1992

A balanced millimeter wave doubler based on pseudomorphic HEMTs

Niklas Rorsman, Hans Grönqvist, Herbert Zirath et al
Journal of Logic and Computation. Vol. 1, p. 353-356
Paper in proceedings
1992

A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology

Iltcho Angelov, Niklas Rorsman, Herbert Zirath
Journal of Logic and Computation. Vol. 2, p. 599-602
Paper in proceedings
1992

HFET millimeterwave resistive mixer

Iltcho Angelov, Niklas Rorsman, Herbert Zirath
Proceedings of the 22nd European Microwave Conference. Vol. 1 (22), p. 614-619
Paper in proceedings
1992

Characteristics of a millimeter wave drain mixer

Iltcho Angelov, Erik Kollberg, Niklas Rorsman et al
Proceedings of the 22nd European Microwave Conference. Vol. 2 (22), p. 987-992
Paper in proceedings
1991

New method for determination of the peak-velocity in epitaxial semiconductor structures by dc measurements on microbridges

Herbert Zirath, W. Strupinski, Hans Grönqvist et al
Applied Physics Letters. Vol. 59 (24), p. 3151-3153
Journal article
1991

Resistive HEMT-mixer with very low LO-power requirements and low intermodulation

Niklas Rorsman, Herbert Zirath
European Microwave Conference. Vol. 2, p. 1469-1474
Paper in proceedings