Niklas Rorsman

Forskningsprofessor at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Projects

2012–2017

The Swedish Graphene Initiative

Mikael Fogelström Applied Quantum Physics
Floriana Lombardi Quantum Device Physics
Avgust Yurgens Quantum Device Physics
Herbert Zirath Microwave Electronics
Jan Stake Terahertz and Millimetre Wave Laboratory
Elsebeth Schröder Quantum Device Physics
Jari Kinaret Condensed Matter Theory
Sergey Kubatkin Quantum Device Physics
Tomas Löfwander Applied Quantum Physics
Eva Olsson Eva Olsson Group
Andreas Isacsson Condensed Matter Theory
Niklas Rorsman Microwave Electronics
Knut and Alice Wallenberg Foundation

2016–2017

Compact Millimeter Wave Integration Concept for Future Wireless and Sensor Systems

Christian Fager Microwave Electronics
Niklas Rorsman Microwave Electronics
Mattias Thorsell Microwave Electronics
Koen Buisman Microwave Electronics
VINNOVA

2013–2017

Energy efficient millimeter wave transmitters

Christian Fager Microwave Electronics
Niklas Rorsman Microwave Electronics
Dan Kuylenstierna Microwave Electronics
William Hallberg Microwave Electronics
Herbert Zirath Microwave Electronics
Mattias Thorsell Microwave Electronics
VINNOVA

2011–2016

III-Nitrides-based electronics for future microwave systems

Niklas Rorsman Microwave Electronics
Herbert Zirath Microwave Electronics
Swedish Foundation for Strategic Research (SSF)

2014–2017

HPM-skydd av AESA baserat på GaN

Niklas Rorsman Microwave Electronics
VINNOVA

2014–2018

Bridging the THz-gap

Herbert Zirath Microwave Electronics
Niklas Rorsman Microwave Electronics
Tommy Ive Photonics
Anna Malmros Microwave Electronics
Knut and Alice Wallenberg Foundation

2014–2017

Indium Nitride-Based Electronics for Millimeterwave and Terahertz Communication and Sensing Applications

Niklas Rorsman Microwave Electronics
Tommy Ive Photonics
Swedish Research Council (VR)

There might be more projects where Niklas Rorsman participates, but you have to be logged in as a Chalmers employee to see them.

Publications

2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article
2017

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

C. Melios, Michael Winters, W. Strupinski et al
Nanoscale. Vol. 9 (10), p. 3440-3448
Journal article
2017

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

E. Guerriero, P. Pedrinazzi, A. Mansouri et al
Scientific Reports. Vol. 7 (1), p. Article Number: 2419-
Journal article
2017

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

A. Pooth, Johan Bergsten, Niklas Rorsman et al
Microelectronics and Reliability. Vol. 68, p. 2-4
Journal article
2017

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Omid Habibpour, Zhongxia Simon He, Wlodek Strupinski et al
Scientific Reports. Vol. 7, p. 41828-
Journal article
2017

Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer

Omid Habibpour, Dhecha Nopchinda, Zhongxia Simon He et al
Journal of Logic and Computation, p. 1185-1187
Paper in proceedings
2017

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Omid Habibpour, Zhongxia Simon He, W. Strupinski et al
IEEE Microwave and Wireless Components Letters. Vol. 27 (2), p. 168-170
Journal article
2017

Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al

Rabia Y. Khosa, Einar SveinbjÓ§rnsson, Michael Winters et al
Materials Science Forum. Vol. 897 MSF, p. 135-138
Paper in proceedings
2016

Carbon-doped GaN on SiC materials for low-memory-effect devices

J. T. Chen, Erik Janzén, Niklas Rorsman et al
ECS Transactions. Vol. 75 (12), p. 61-65
Paper in proceedings
2016

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang, C. Liu, Johan Bergsten et al
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan, p. Article no. 7528722-
Paper in proceedings
2016

Graphene FET Gigabit On-Off Keying Demodulator at 96 GHz

Omid Habibpour, Zhongxia Simon He, Wlodek Strupinski et al
IEEE Electron Device Letters (3), p. 333-336
Journal article
2016

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Johan Bergsten, X. Li, Daniel Nilsson et al
Japanese Journal of Applied Physics. Vol. 55 (5)
Journal article
2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Olle Axelsson, Niklas Billström, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Journal article
2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Journal article
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Journal article
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Journal article
2016

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

Michael Winters, E. O. Sveinbjornsson, C. Melios et al
AIP Advances. Vol. 6 (8)
Journal article
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Journal article
2015

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

J. Hassan, Michael Winters, I. G. Ivanov et al
Carbon. Vol. 82 (C), p. 12-23
Journal article
2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

X. Li, Johan Bergsten, Daniel Nilsson et al
Applied Physics Letters. Vol. 107 (26)
Journal article
2015

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

J. T. Chen, J. Pomeroy, Niklas Rorsman et al
Journal of Crystal Growth. Vol. 428, p. 54-58
Journal article
2015

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Michael Winters, Omid Habibpour, I. G. Ivanov et al
Carbon. Vol. 81 (1), p. 96-104
Journal article
2015

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi Ngoc Do Thanh, Anna Malmros, P. Gamarra et al
IEEE Electron Device Letters. Vol. 36 (4), p. 315-317
Journal article
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
Paper in proceedings
2015

Hysteresis modeling in graphene field effect transistors

Michael Winters, Einar Sveinbjörnsson, Niklas Rorsman
Journal of Applied Physics. Vol. 117 (7), p. Art. no, 074501-
Journal article
2015

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

Cesar Sanchez Perez, MUSTAFA ÖZEN, Christer Andersson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 63 (8), p. 2579-2588
Journal article
2015

Graphene self-switching diodes as zero-bias microwave detectors

Andreas Westlund, Michael Winters, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Journal article
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2015

Errautm: "graphene self-switching diodes as zero-bias microwave detectors" (Applied Physics Letters (2015) 106 (093116)

Andreas Westlund, Michael Winters, I.G. IVanov et al
Applied Physics Letters. Vol. 106 (15)
Journal article
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Johan Bergsten, Anna Malmros, M. Tordjman et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Journal article
2015

Developing Graphene based MMICs on SiC substrate

Omid Habibpour, Niklas Rorsman, Herbert Zirath
Paper in proceedings
2015

Graphene self-switching diodes as zero-bias microwave detectors

Andreas Westlund, Michael Winters, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Michael Winters, Mattias Thorsell, W. Strupinski et al
Applied Physics Letters. Vol. 107 (14)
Journal article
2015

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, J. T. Chen, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Journal article
2014

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

Szhau Lai, Dan Kuylenstierna, MUSTAFA ÖZEN et al
IEEE Microwave and Wireless Components Letters. Vol. 24 (6), p. 412-414
Journal article
2014

Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

Michael Winters, E. B. Thorsteinsson, E. O. Sveinbjornsson et al
Materials Science Forum. Vol. 778-780, p. 1146-1149
Paper in proceedings
2014

High gain graphene field effect transistors for wideband amplifiers

Omid Habibpour, Michael Winters, Niklas Rorsman et al
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014, p. 371-373
Paper in proceedings
2014

High linearity MMIC power amplifier design with controlled junction temperature

Oliver Silva Barrera, Iltcho Angelov, Herbert Zirath et al
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014, p. Art. no. 6815096-
Paper in proceedings
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper in proceedings
2013

Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator

Szhau Lai, Dan Kuylenstierna, Mikael Hörberg et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (11), p. 3916-3926
Journal article
2013

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

David Gustafsson, Jessica Chani Cahuana, Dan Kuylenstierna et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 922-930
Journal article
2013

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Michael Winters, Mattias Thorsell, J. ul Hassan et al
Materials Science Forum. Vol. 740-742, p. 129-132
Paper in proceedings
2013

Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization

J. Pomeroy, Niklas Rorsman, J. T. Chen et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2013

A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation

Christer Andersson, MUSTAFA ÖZEN, David Gustafsson et al
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 7-10 October 2013, p. 283-286
Paper in proceedings
2013

Thermal conductivity of isotopically enriched silicon carbide

B. Lundqvist, P.E. Raad, M. Yazdanfar et al
THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings, p. 58-61
Paper in proceedings
2013

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Michael Winters, J. Hassan, Herbert Zirath et al
Journal of Applied Physics. Vol. 113 (19)
Journal article
2012

Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros, Kristoffer Andersson, Niklas Rorsman
Thin Solid Films. Vol. 520 (6), p. 2162-2165
Journal article
2012

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Martin Fagerlind, I. Booker, P. Bergman et al
IEEE Transactions on Device and Materials Reliability. Vol. 12 (3), p. 538-546
Magazine article
2012

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Journal article
2012

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

Christer Andersson, David Gustafsson, Koji Yamanaka et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 60 (12), p. 3778-3786
Journal article
2012

Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading

Christer Andersson, J. Moon, Christian Fager et al
Journal of Logic and Computation
Paper in proceedings
2012

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
Journal of Logic and Computation
Paper in proceedings
2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Pirooz Chehrenegar, Olle Axelsson, Jan Grahn et al
Paper in proceedings
2011

Epitaxial and Layout Optimization of SiC Microwave Power Varactors

Christer Andersson, Björn Magnusson, Niklas Henelius et al
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011), p. 1642-1645
Paper in proceedings
2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al
IEEE Electron Device Letters. Vol. 32 (7), p. 889-891
Journal article
2011

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

Christer Andersson, Mattias Thorsell, Niklas Rorsman
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (7), p. 1753-1760
Journal article
2011

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Martin Fagerlind, Niklas Rorsman
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2204-2206
Journal article
2011

High performance GaN front-end MMICs

Niklas Billström, Joakim Nilsson, Audun Tengs et al
14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, Manchester, 10 October through 11 October 2011, p. 348-351
Paper in proceedings
2011

Electrothermal Access Resistance Model for GaN-Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Journal article
2011

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Anna Malmros, H. Blanck, Niklas Rorsman
Semiconductor Science and Technology. Vol. 26 (7)
Journal article
2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Christer Andersson, Niclas Ejebjörk, Anne Henry et al
IEEE Electron Device Letters. Vol. 32 (6), p. 788-790
Journal article
2011

Optimization of SiC MESFET for high power and high frequency applications

Niclas Ejebjörk, Herbert Zirath, Peder Bergman et al
Materials Science Forum. Vol. 679-680, p. 629-632
Paper in proceedings
2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Christer Andersson, Niclas Ejebjörk, Anne Henry et al
IEEE Electron Device Letters. Vol. 32 (6), p. 788-790
Journal article
2011

High efficiency RF pulse width modulation with tunable load network class-E PA

MUSTAFA ÖZEN, Christer Andersson, Mattias Thorsell et al
Paper in proceedings
2011

An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator

Herbert Zirath, Szhau Lai, Dan Kuylenstierna et al
33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011
Paper in proceedings
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Fredrik Allerstam, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Journal article
2010

TiN thin film resistors for monolithic microwave integrated circuits

Anna Malmros, Mattias Sudow, Kristoffer Andersson et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 28 (5), p. 912-915
Journal article
2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al
Journal of Applied Physics. Vol. 108 (1)
Journal article
2010

Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

J. Y. Shiu, C. Y. Lu, T. Y. Su et al
Japanese Journal of Applied Physics. Vol. 49 (2), p. Art. no. 021001-
Journal article
2010

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
Conference poster
2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Journal article
2009

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Martin Fagerlind, Herbert Zirath, Niklas Rorsman
Semiconductor Science and Technology. Vol. 24 (4), p. 045014-
Journal article
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Journal article
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Journal article
2009

S-band discrete and MMIC GaN power amplifiers

Joakim Nilsson, Niklas Billström, Niklas Rorsman et al
European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009, p. 495-498
Paper in proceedings
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Journal article
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

Vincent Desmaris, Jin-Yu Shiu, Niklas Rorsman et al
Solid-State Electronics. Vol. 52, p. 632-636
Journal article
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Journal of Logic and Computation, p. 463-466
Paper in proceedings
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper in proceedings
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Journal article
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper in proceedings
2008

Influence of gate position on dispersion characteristics of GaN HEMTs

Martin Fagerlind, Herbert Zirath, Urban Forsberg et al
WOCSDICE 2008, Abstract book, p. 99-100
Paper in proceedings
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Journal article
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Journal article
2007

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

Jin-Yu Shiu, Vincent Desmaris, Niklas Rorsman et al
Semicronductor Science and Technology. Vol. 22, p. 717-721
Journal article
2007

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Hans Hjelmgren, Kristoffer Andersson, Joakim Eriksson et al
Solid-State Electronics. Vol. 51 (8), p. 1144-1152
Journal article
2007

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Jin-Yu Shiu, Jui-Chien Huang, Vincent Desmaris et al
IEEE Electron Device Letters. Vol. 28 (6), p. 476-478
Journal article
2006

A highly linear double balanced Schottky diode S-band mixer

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 16 (6), p. 336 - 8
Journal article
2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Anders Mellberg, Niklas Rorsman et al
Solid State Electronics. Vol. 50 (5), p. 858-864
Journal article
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Niklas Billström et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Journal article
2006

Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs

Iltcho Angelov, Kristoffer Andersson, D Schreuers et al
IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan, p. 279-282
Paper in proceedings
2006

SiC MESFET with a Double Gate Recess

Per-Åke Nilsson, Niklas Rorsman, Mattias Sudow et al
Materials Science Forum. Vol. 527-529, p. 1227-1230
Paper in proceedings
2006

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers

Vincent Desmaris, Mariusz Rudzinski, Niklas Rorsman et al
IEEE Transactions on Electron Devices. Vol. 53 (9), p. 2413-17
Journal article
2006

Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Jin-Yu Shiu, Chung-Lu Lu et al
Journal of Applied Physics. Vol. 100 (3), p. 34904-1-4-
Journal article
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Kristoffer Andersson, Mattias Sudow, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Journal article
2005

DC and RF performance of MESFET mode 4H-SiC Static Induction transistor

Dimitar Milkov Dochev, Kristina Dynefors, Vincent Desmaris et al
Paper in proceedings
2005

The Chalmers microstrip SiC MMIC Process

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
Paper in proceedings
2005

Planar Schottky Microwave Diodes on 4H-SiC

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Materials Science Forum. Vol. 483-485, p. 937-940
Paper in proceedings
2005

Fabrication and Characterization of AlGaN/GaN HEMTs

Vincent Desmaris, Niklas Rorsman
Report
2004

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Electrochemical and Solid-State Letters. Vol. 7 (4), p. G72-
Journal article
2004

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Materials Science Forum. Vol. 457-460 (2), p. 1629-
Paper in proceedings
2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Mikael Malmkvist, Anders Mellberg, Jan Grahn et al
16th International Conference on Indium Phosphide and Related Materials, p. 386-388
Paper in proceedings
2004

Fabrication and characterization of reactively sputtered TaN thin film resistors for millimeter wave applications

Anders Mellberg, Samuel P. Nicols, Niklas Rorsman et al
Electrochemical and Solid State Letters. Vol. 7 (11), p. G261-3
Journal article
2004

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Materials Science Forum. Vol. 457-460 (2), p. 1629-
Paper in proceedings
2004

Planar SiC Schottky Diodes for MMIC Applications

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). Vol. 1, p. 153-156
Journal article
2004

Processing of RF-MEMS Switches

Ros-Marie Lundh, Yangjian Chen, Shimul Chandra Saha et al
Paper in proceedings
2004

Cryogenic 2--4 GHz ultra low noise amplifier

Anders Mellberg, Niklas Wadefalk, Iltcho Angelov et al
IEEE MTT-S International Microwave Symposium Digest, p. 161-163
Paper in proceedings
2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Anders Mellberg, Mikael Malmkvist, Jan Grahn et al
Proc. 34th European Microwave Conf., p. 171-174
Paper in proceedings
2004

Simple self-aligned fabrication process for silicon carbide static induction transistors

Kristina Dynefors, Vincent Desmaris, Joakim Eriksson et al
Materials Science Forum. Vol. 457-460, p. 1125-
Journal article
2004

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Electrochemical and Solid-State Letters. Vol. 7 (4), p. G72-
Journal article
2003

Research and development of AlGaN/GaN HEMTs

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Paper in proceedings
2003

research and development of SiC Static Induction transistor

Kristina Dynefors, Vincent Desmaris, Joakim Eriksson et al
Conference contribution
2003

C-Band Linear Resistive Wide Bandgap FET Mixers

Kristoffer Andersson, Vincent Desmaris, Joakim Eriksson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2, p. 8-
Paper in proceedings
2002

Resistive SiC-MESFET mixer

Kristoffer Andersson, Joakim Eriksson, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 12 (4), p. 119-121
Journal article
2001

Research and development of AlGaN/GaN HEMTs

Vincent Desmaris, Kristina Dynefors, Joakim Eriksson et al
Paper in proceedings
1993

W-band subharmonically pumped resistive mixer based on pseudomorphic heterostructure field effect transistor technology

Herbert Zirath, Iltcho Angelov, Niklas Rorsman et al
Journal of Logic and Computation. Vol. 1, p. 341-344
Paper in proceedings
1993

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Niklas Rorsman, Christer Karlsson, Herbert Zirath et al
23rd European Solid State Device Research Conference, ESSDERC 1993, p. 765-768
Paper in proceedings
1993

F-band resistive mixer based on heterostructure field effect transistor technology

Iltcho Angelov, Herbert Zirath, Niklas Rorsman et al
Journal of Logic and Computation. Vol. 2, p. 787-790
Paper in proceedings
1992

A new empirical nonlinear model for HEMT-devices

Iltcho Angelov, Herbert Zirath, Niklas Rorsman
Journal of Logic and Computation. Vol. 3, p. 1583-1586
Paper in proceedings
1992

A balanced millimeter wave doubler based on pseudomorphic HEMTs

Iltcho Angelov, Herbert Zirath, Niklas Rorsman et al
Journal of Logic and Computation. Vol. 1, p. 353-356
Paper in proceedings
1992

HFET millimeterwave resistive mixer

Herbert Zirath, Iltcho Angelov, Niklas Rorsman
Proceedings of the 22nd European Microwave Conference. Vol. 1 (22), p. 614-619
Paper in proceedings
1992

A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology

Herbert Zirath, Iltcho Angelov, Niklas Rorsman
Journal of Logic and Computation. Vol. 2, p. 599-602
Paper in proceedings
1992

Characteristics of a millimeter wave drain mixer

Herbert Zirath, Iltcho Angelov, Niklas Rorsman et al
Proceedings of the 22nd European Microwave Conference. Vol. 2 (22), p. 987-992
Paper in proceedings
1991

New method for determination of the peak-velocity in epitaxial semiconductor structures by dc measurements on microbridges

W. Strupinski, Herbert Zirath, Hans Grönqvist et al
Applied Physics Letters. Vol. 59 (24), p. 3151-3153
Journal article
1991

Resistive HEMT-mixer with very low LO-power requirements and low intermodulation

Herbert Zirath, Niklas Rorsman
European Microwave Conference. Vol. 2, p. 1469-1474
Paper in proceedings