Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies
Journal article, 2015

Epitaxial graphene is grown on semi-insulating (SI) 4H-SiC in a hot wall CVD reactor by graphitization and in-situ intercalation with (H)ydrogen. A holistic material characterization is performed in order to ascertain the number of layers, layer uniformity, and electron transport properties of the epi-layers via electronic test structures and Raman spectroscopy. Bilayer graphene field effect transistors (GFETs) are fabricated using a full electron beam lithography (EBL) process which is optimized for low contact resistances of r(c) < 0.2 Omega mm. Mobilities of order 2500 cm(2)/V s are achieved on bilayer samples after fabrication. The devices demonstrate high transconductance g(m) = 400 mS/mm and high current density I-ds = 1.8 A/mm. The output conductance at the bias of maximum transconductance is g(ds) = 300 mS/mm. The GFETs demonstrate an extrinsic f(t)(ext) and f(max)(ext) of 20 and 13 GHz, respectively and show 6 dB power gain at 1 GHz in a 50 Omega system, which is the highest reported to date.

Author

Michael Winters

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

I. G. Ivanov

Linköping University

J. Hassan

Linköping University

E. Janzen

Linköping University

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Carbon

0008-6223 (ISSN)

Vol. 81 1 96-104

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

European Commission (FP7), 2013-10-01 -- 2016-03-31.

Subject Categories

Materials Engineering

Physical Chemistry

Nano Technology

DOI

10.1016/j.carbon.2014.09.029

More information

Latest update

2/28/2018