Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs
Journal article, 2011

The growth, fabrication, and performance of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a total barrier thickness of 7 nm are reported. An optimized surface passivation and an Ohmic recess etch yield HEMTs exhibiting 0.72 S/mm peak extrinsic DC transconductance at a current density of 0.47 A/mm. Devices with a gate length of 90 nm achieve 78 GHz unity-current-gain frequency and up to 166 GHz maximum frequency of oscillation. The minimum noise figure at 10 GHz is 0.52 dB with an associated gain of 9.5 dB.

microwave noise

surface passivation

high-electron mobility transistors (HEMTs)

aluminum gallium nitride

recessed ohmic contacts

Author

Jonathan Felbinger

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Olle Axelsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Xiang Gao

IQE (Europe) Ltd.

Shiping Guo

IQE (Europe) Ltd.

William Schaff

Cornell University

Lester Eastman

Cornell University

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 32 7 889-891 5872002

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2011.2143384

More information

Latest update

9/3/2018 2