Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs
Journal article, 2011
microwave noise
surface passivation
high-electron mobility transistors (HEMTs)
aluminum gallium nitride
recessed ohmic contacts
Author
Jonathan Felbinger
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Olle Axelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Xiang Gao
IQE (Europe) Ltd.
Shiping Guo
IQE (Europe) Ltd.
William Schaff
Cornell University
Lester Eastman
Cornell University
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 32 7 889-891 5872002Areas of Advance
Information and Communication Technology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LED.2011.2143384