Olle Axelsson

Publications (11)
Projects (0)

Showing 11 publications

2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al

IEEE Electron Device Letters. Vol. 38 (7), p. 926-928

Journal article

2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Olle Axelsson, Niklas Billström, Niklas Rorsman et al

IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33

Journal article

2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al

IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892

Review article

2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al

IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332

Journal article

2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, K. Andersson et al

IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46

Journal article

2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al

IEEE Electron Device Letters. Vol. 36 (6), p. 537-539

Journal article

2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al

2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3. Vol. 3

Paper in proceeding

2012

Noise temperature of an electronic tuner for noise parameter measurement systems

Olle Axelsson, Mattias Thorsell, Kristoffer Andersson et al

79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291197-

Paper in proceeding

2012

Highly linear gallium nitride MMIC LNAs

Olle Axelsson, Kristoffer Andersson

2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012

Paper in proceeding

2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Pirooz Chehrenegar, Olle Axelsson, Jan Grahn et al

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011

Paper in proceeding

2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al

IEEE Electron Device Letters. Vol. 32 (7), p. 889-891

Journal article

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