Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation
Journal article, 2016
hfets
noise figure
oscillator
Engineering
Physics
AlGaN/GaN high-electron-mobility transistors (HEMTs)
low-frequency noise (LFN)
Author
Tongde Huang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Olle Axelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN)
Vol. 63 10 3887-3892Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/ted.2016.2597758