Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation
Journal article, 2016

High-frequency and low-frequency noise (LFN) performance of GaN high electron-mobility transistors (HEMTs), passivated with SiNx deposited by either in situ or low-pressure-chemical-vapor-deposition (LPCVD), are compared. From 8-26 GHz, the LPCVD sample has a lower minimum noise figure (1 dB at 8 GHz) because of lower power spectral density of noise sources and less transconductance (g(m)) dispersion. The LPCVD and the in situ SiNx passivated HEMTs exhibit similar LFN in the 1 Hz-100 kHz range (drain current noise spectra similar to 10(-17) A(2)/Hz at 100 kHz). Nevertheless, LPCVD should be a preferred choice for voltage-controlled oscillator (VCO) applications, since it is capable of suppressing current collapse more effectively, which results in a higher output power and, therefore, a lower phase noise. Furthermore, the low current collapse, low LFN, and minimum noise figure makes the LPCVD SiNx passivation a promising candidate for multifunctional monolithic microwave integrated circuits, including power amplifiers, low-noise amplifier, switches, mixers, and VCOs.

hfets

noise figure

oscillator

Engineering

Physics

AlGaN/GaN high-electron-mobility transistors (HEMTs)

low-frequency noise (LFN)

Author

Tongde Huang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Olle Axelsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thi Ngoc Do Thanh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 63 10 3887-3892

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/ted.2016.2597758

More information

Created

10/7/2017