Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation
Review article, 2016
low-frequency noise (LFN)
AlGaN/GaN high-electron-mobility transistors (HEMTs)
Engineering
oscillator
Physics
hfets
noise figure
Author
Tongde Huang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Olle Axelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 63 10 3887-3892 7542172Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
DOI
10.1109/ted.2016.2597758