Tongde Huang

Showing 9 publications


Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 67 (6), p. 2297-2303
Journal article

A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Tongde Huang, Sining An, Johan Bergsten et al
Japanese Journal of Applied Physics. Vol. 58 (SC)
Journal article

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Tongde Huang, Huaxing Jiang, Johan Bergsten et al
Applied Physics Letters. Vol. 113 (23)
Journal article

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Tongde Huang, Johan Bergsten, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 65 (3), p. 908-914
Journal article

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang, C. Liu, Johan Bergsten et al
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan, p. Article no. 7528722-
Paper in proceeding

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Review article

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper in proceeding

Download publication list

You can download this list to your computer.

Filter and download publication list

As logged in user (Chalmers employee) you find more export functions in MyResearch.

You may also import these directly to Zotero or Mendeley by using a browser plugin. These are found herer:

Zotero Connector
Mendeley Web Importer

The service SwePub offers export of contents from Research in other formats, such as Harvard and Oxford in .RIS, BibTex and RefWorks format.

There are no projects.
There might be more projects where Tongde Huang participates, but you have to be logged in as a Chalmers employee to see them.