A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz
Journal article, 2019
Author
Tongde Huang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sining An
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Zhongxia Simon He
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Japanese Journal of Applied Physics
0021-4922 (ISSN) 13474065 (eISSN)
Vol. 58 SC SCCD19Subject Categories (SSIF 2011)
Atom and Molecular Physics and Optics
Other Physics Topics
Condensed Matter Physics
DOI
10.7567/1347-4065/ab09d9