Johan Bergsten

Showing 22 publications

2019

A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Tongde Huang, Sining An, Johan Bergsten et al
Japanese Journal of Applied Physics. Vol. 58
Journal article
2018

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Yen-Ku Lin, Johan Bergsten, Hector Leong et al
Semiconductor Science and Technology. Vol. 33 (9)
Journal article
2018

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Tongde Huang, Huaxing Jiang, Johan Bergsten et al
Applied Physics Letters. Vol. 113 (23)
Journal article
2018

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Journal article
2018

A GaN-SiC hybrid material for high-frequency and power electronics

J. T. Chen, Johan Bergsten, Jun Lu et al
Applied Physics Letters. Vol. 113 (4)
Journal article
2018

Analysis of Thermal Effects in Integrated Radio Transmitters

Christian Fager, Mattias Thorsell, Emanuel Baptista et al
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Paper in proceedings
2018

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Johan Bremer, Johan Bergsten, Lowisa Hanning et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (10), p. 4430-4438
Journal article
2018

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Tongde Huang, Johan Bergsten, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 65 (3), p. 908-914
Journal article
2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article
2017

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

A. Pooth, Johan Bergsten, Niklas Rorsman et al
Microelectronics and Reliability. Vol. 68, p. 2-4
Journal article
2016

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang, C. Liu, Johan Bergsten et al
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan, p. Article no. 7528722-
Paper in proceedings
2016

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Johan Bergsten, X. Li, Daniel Nilsson et al
Japanese Journal of Applied Physics. Vol. 55 (5)
Journal article
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Journal article
2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

X. Li, Johan Bergsten, Daniel Nilsson et al
Applied Physics Letters. Vol. 107 (26)
Journal article
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper in proceedings
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Johan Bergsten, Anna Malmros, M. Tordjman et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Journal article
2015

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, J. T. Chen, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Journal article
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2014

Spin transport and precession in graphene measured by nonlocal and three-terminal methods

André Dankert, Venkata Kamalakar Mutta, Saroj Prasad Dash et al
Applied Physics Letters. Vol. 104 (19), p. 192403 -
Journal article
2014

Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Applied Physics Letters. Vol. 105 (212405)
Journal article
2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Venkata Kamalakar Mutta, André Dankert, Johan Bergsten et al
Scientific Reports. Vol. 4, p. Art. no. 6146-
Journal article

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