AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
Journal article, 2016

AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics


Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

X. Li

Linköping University

Daniel Nilsson

Linköping University

O. Danielsson

Linköping University

H. Pedersen

Linköping University

E. Janzen

Linköping University

Urban Forsberg

Linköping University

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Japanese Journal of Applied Physics

0021-4922 (ISSN) 13474065 (eISSN)

Vol. 55 5 05FK02

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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