AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
Journal article, 2016
Author
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
X. Li
Linköping University
Daniel Nilsson
Linköping University
O. Danielsson
Linköping University
H. Pedersen
Linköping University
E. Janzen
Linköping University
Urban Forsberg
Linköping University
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Japanese Journal of Applied Physics
0021-4922 (ISSN) 13474065 (eISSN)
Vol. 55 5 05FK02Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.7567/jjap.55.05fk02