AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
Artikel i vetenskaplig tidskrift, 2016

AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics

Författare

Johan Bergsten

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

X. Li

Linköpings universitet

Daniel Nilsson

Linköpings universitet

O. Danielsson

Linköpings universitet

H. Pedersen

Linköpings universitet

E. Janzen

Linköpings universitet

Urban Forsberg

Linköpings universitet

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 55

Ämneskategorier

Elektroteknik och elektronik

DOI

10.7567/jjap.55.05fk02