Niklas Rorsman

Forskningsprofessor vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Visar 136 publikationer

2018

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Yen-Ku Lin, Johan Bergsten, Hector Leong et al
Semiconductor Science and Technology. Vol. 33 (9)
Artikel i vetenskaplig tidskrift
2018

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Artikel i vetenskaplig tidskrift
2018

A GaN-SiC hybrid material for high-frequency and power electronics

J. T. Chen, Johan Bergsten, Jun Lu et al
Applied Physics Letters. Vol. 113 (4)
Artikel i vetenskaplig tidskrift
2018

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Tongde Huang, Johan Bergsten, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 65 (3), p. 908-914
Artikel i vetenskaplig tidskrift
2018

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Rabia Y. Khosa, E. B. Thorsteinsson, Michael Winters et al
AIP Advances. Vol. 8 (2)
Artikel i vetenskaplig tidskrift
2018

Design and Large-Signal Characterization of High-Power Varactor-Based Impedance Tuners

Cesar Sanchez Perez, Christer Anderson, Koen Buisman et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (4), p. 1744-1753
Artikel i vetenskaplig tidskrift
2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Artikel i vetenskaplig tidskrift
2017

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

C. Melios, Michael Winters, W. Strupinski et al
Nanoscale. Vol. 9 (10), p. 3440-3448
Artikel i vetenskaplig tidskrift
2017

Novel Low-Loss Millimeter- Wave Transition From Waveguide-to-Microstrip Line Suitable for MMIC Integration and Packaging

Ashraf Uz Zaman, Vessen Vassilev, Herbert Zirath et al
IEEE Microwave and Wireless Components Letters. Vol. 27 (12), p. 1098-1100
Artikel i vetenskaplig tidskrift
2017

Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems

Omid Habibpour, Wlodzimierz Strupinski, Niklas Rorsman et al
MRS ADVANCES. Vol. 2 (58-59), p. 3559-3564
Artikel i vetenskaplig tidskrift
2017

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

E. Guerriero, P. Pedrinazzi, A. Mansouri et al
Scientific Reports. Vol. 7 (1), p. Article Number: 2419-
Artikel i vetenskaplig tidskrift
2017

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

A. Pooth, Johan Bergsten, Niklas Rorsman et al
Microelectronics and Reliability. Vol. 68, p. 2-4
Artikel i vetenskaplig tidskrift
2017

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Omid Habibpour, Zhongxia Simon He, Wlodek Strupinski et al
Scientific Reports. Vol. 7, p. 41828-
Artikel i vetenskaplig tidskrift
2017

Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer

Omid Habibpour, Dhecha Nopchinda, Zhongxia Simon He et al
IEEE MTT-S International Microwave Symposium Digest, p. 1185-1187
Paper i proceeding
2017

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Omid Habibpour, Zhongxia Simon He, W. Strupinski et al
IEEE Microwave and Wireless Components Letters. Vol. 27 (2), p. 168-170
Artikel i vetenskaplig tidskrift
2017

Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al

Rabia Y. Khosa, Einar Sveinbjӧrnsson, Michael Winters et al
Materials Science Forum. Vol. 897 MSF, p. 135-138
Paper i proceeding
2016

Carbon-doped GaN on SiC materials for low-memory-effect devices

J. T. Chen, Erik Janzén, Niklas Rorsman et al
ECS Transactions. Vol. 75 (12), p. 61-65
Paper i proceeding
2016

Graphene FET Gigabit On-Off Keying Demodulator at 96 GHz

Omid Habibpour, Zhongxia Simon He, Wlodek Strupinski et al
IEEE Electron Device Letters (3), p. 333-336
Artikel i vetenskaplig tidskrift
2016

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Tongde Huang, C. Liu, Johan Bergsten et al
2016 Compound Semiconductor Week, CSW 2016; Toyama, Japan, p. Article no. 7528722-
Paper i proceeding
2016

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Johan Bergsten, X. Li, Daniel Nilsson et al
Japanese Journal of Applied Physics. Vol. 55 (5)
Artikel i vetenskaplig tidskrift
2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Olle Axelsson, Niklas Billström, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Artikel i vetenskaplig tidskrift
2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Artikel i vetenskaplig tidskrift
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Artikel i vetenskaplig tidskrift
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Artikel i vetenskaplig tidskrift
2016

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

Michael Winters, E. O. Sveinbjornsson, C. Melios et al
AIP Advances. Vol. 6 (8)
Artikel i vetenskaplig tidskrift
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Artikel i vetenskaplig tidskrift
2015

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Michael Winters, Omid Habibpour, I. G. Ivanov et al
Carbon. Vol. 81 (1), p. 96-104
Artikel i vetenskaplig tidskrift
2015

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

J. Hassan, Michael Winters, I. G. Ivanov et al
Carbon. Vol. 82 (C), p. 12-23
Artikel i vetenskaplig tidskrift
2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

X. Li, Johan Bergsten, Daniel Nilsson et al
Applied Physics Letters. Vol. 107 (26)
Artikel i vetenskaplig tidskrift
2015

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

J. T. Chen, J. Pomeroy, Niklas Rorsman et al
Journal of Crystal Growth. Vol. 428, p. 54-58
Artikel i vetenskaplig tidskrift
2015

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Thi Ngoc Do Thanh, Anna Malmros, P. Gamarra et al
IEEE Electron Device Letters. Vol. 36 (4), p. 315-317
Artikel i vetenskaplig tidskrift
2015

Hysteresis modeling in graphene field effect transistors

Michael Winters, Einar Sveinbjörnsson, Niklas Rorsman
Journal of Applied Physics. Vol. 117 (7), p. Art. no, 074501-
Artikel i vetenskaplig tidskrift
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper i proceeding
2015

Graphene self-switching diodes as zero-bias microwave detectors

Andreas Westlund, Michael Winters, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Artikel i vetenskaplig tidskrift
2015

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

Cesar Sanchez Perez, MUSTAFA ÖZEN, Christer Andersson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 63 (8), p. 2579-2588
Artikel i vetenskaplig tidskrift
2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Artikel i vetenskaplig tidskrift
2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Michael Winters, Mattias Thorsell, W. Strupinski et al
Applied Physics Letters. Vol. 107 (14)
Artikel i vetenskaplig tidskrift
2015

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Johan Bergsten, Anna Malmros, M. Tordjman et al
Semiconductor Science and Technology. Vol. 30 (10), p. 105034-
Artikel i vetenskaplig tidskrift
2015

Developing Graphene based MMICs on SiC substrate

Omid Habibpour, Niklas Rorsman, Herbert Zirath
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper i proceeding
2015

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, J. T. Chen, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Artikel i vetenskaplig tidskrift
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Artikel i vetenskaplig tidskrift
2015

Errautm: "graphene self-switching diodes as zero-bias microwave detectors" (Applied Physics Letters (2015) 106 (093116)

Andreas Westlund, Michael Winters, I.G. IVanov et al
Applied Physics Letters. Vol. 106 (15)
Artikel i vetenskaplig tidskrift
2014

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

Szhau Lai, Dan Kuylenstierna, MUSTAFA ÖZEN et al
IEEE Microwave and Wireless Components Letters. Vol. 24 (6), p. 412-414
Artikel i vetenskaplig tidskrift
2014

Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

Michael Winters, E. B. Thorsteinsson, E. O. Sveinbjornsson et al
Materials Science Forum. Vol. 778-780, p. 1146-1149
Paper i proceeding
2014

High gain graphene field effect transistors for wideband amplifiers

Omid Habibpour, Michael Winters, Niklas Rorsman et al
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014, p. 371-373
Paper i proceeding
2014

High linearity MMIC power amplifier design with controlled junction temperature

Oliver Silva Barrera, Iltcho Angelov, Herbert Zirath et al
International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014, p. Art. no. 6815096-
Paper i proceeding
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper i proceeding
2013

Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator

Szhau Lai, Dan Kuylenstierna, Mikael Hörberg et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (11), p. 3916-3926
Artikel i vetenskaplig tidskrift
2013

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

David Gustafsson, Jessica Chani Cahuana, Dan Kuylenstierna et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 922-930
Artikel i vetenskaplig tidskrift
2013

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Michael Winters, Mattias Thorsell, J. ul Hassan et al
Materials Science Forum. Vol. 740-742, p. 129-132
Paper i proceeding
2013

Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization

J. Pomeroy, Niklas Rorsman, J. T. Chen et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2013

A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation

Christer Andersson, MUSTAFA ÖZEN, David Gustafsson et al
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany, 7-10 October 2013, p. 283-286
Paper i proceeding
2013

Thermal conductivity of isotopically enriched silicon carbide

B. Lundqvist, P.E. Raad, M. Yazdanfar et al
THERMINIC 2013 - 19th International Workshop on Thermal Investigations of ICs and Systems, Proceedings, p. 58-61
Paper i proceeding
2013

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Michael Winters, J. Hassan, Herbert Zirath et al
Journal of Applied Physics. Vol. 113 (19)
Artikel i vetenskaplig tidskrift
2012

Combined TiN- and TaN temperature compensated thin film resistors

Anna Malmros, Kristoffer Andersson, Niklas Rorsman
Thin Solid Films. Vol. 520 (6), p. 2162-2165
Artikel i vetenskaplig tidskrift
2012

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Martin Fagerlind, I. Booker, P. Bergman et al
IEEE Transactions on Device and Materials Reliability. Vol. 12 (3), p. 538-546
Artikel i övriga tidskrifter
2012

Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Martin Fagerlind, Niklas Rorsman
Journal of Applied Physics. Vol. 112 (1), p. Art. no. 014511-
Artikel i vetenskaplig tidskrift
2012

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Artikel i vetenskaplig tidskrift
2012

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

Christer Andersson, David Gustafsson, Koji Yamanaka et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 60 (12), p. 3778-3786
Artikel i vetenskaplig tidskrift
2012

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2012

Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading

Christer Andersson, J. Moon, Christian Fager et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Pirooz Chehrenegar, Olle Axelsson, Jan Grahn et al
2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011
Paper i proceeding
2011

Epitaxial and Layout Optimization of SiC Microwave Power Varactors

Christer Andersson, Björn Magnusson, Niklas Henelius et al
Asia-Pacific Microwave Conference Proceedings, APMC (APMC 2011 ;Melbourne, VIC; 5 - 8 December 2011), p. 1642-1645
Paper i proceeding
2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al
IEEE Electron Device Letters. Vol. 32 (7), p. 889-891
Artikel i vetenskaplig tidskrift
2011

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

Christer Andersson, Mattias Thorsell, Niklas Rorsman
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (7), p. 1753-1760
Artikel i vetenskaplig tidskrift
2011

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Martin Fagerlind, Niklas Rorsman
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2204-2206
Artikel i vetenskaplig tidskrift
2011

High performance GaN front-end MMICs

Niklas Billström, Joakim Nilsson, Audun Tengs et al
14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, Manchester, 10 October through 11 October 2011, p. 348-351
Paper i proceeding
2011

Electrothermal Access Resistance Model for GaN-Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Artikel i vetenskaplig tidskrift
2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Christer Andersson, Niclas Ejebjörk, Anne Henry et al
IEEE Electron Device Letters. Vol. 32 (6), p. 788-790
Artikel i vetenskaplig tidskrift
2011

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Anna Malmros, H. Blanck, Niklas Rorsman
Semiconductor Science and Technology. Vol. 26 (7)
Artikel i vetenskaplig tidskrift
2011

Optimization of SiC MESFET for high power and high frequency applications

Niclas Ejebjörk, Herbert Zirath, Peder Bergman et al
Materials Science Forum. Vol. 679-680, p. 629-632
Paper i proceeding
2011

High efficiency RF pulse width modulation with tunable load network class-E PA

MUSTAFA ÖZEN, Christer Andersson, Mattias Thorsell et al
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011
Paper i proceeding
2011

An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator

Herbert Zirath, Szhau Lai, Dan Kuylenstierna et al
33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011, Waikoloa, 16-19 October 2011
Paper i proceeding
2010

IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING

Martin Fagerlind, Niklas Rorsman
The 34th Workshop on Compound Semiconductor Devices and Integrated Circuits
Paper i proceeding
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Fredrik Allerstam, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Artikel i vetenskaplig tidskrift
2010

TiN thin film resistors for monolithic microwave integrated circuits

Anna Malmros, Mattias Sudow, Kristoffer Andersson et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 28 (5), p. 912-915
Artikel i vetenskaplig tidskrift
2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al
Journal of Applied Physics. Vol. 108 (1)
Artikel i vetenskaplig tidskrift
2010

Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

J. Y. Shiu, C. Y. Lu, T. Y. Su et al
Japanese Journal of Applied Physics. Vol. 49 (2), p. Art. no. 021001-
Artikel i vetenskaplig tidskrift
2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Artikel i vetenskaplig tidskrift
2010

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Poster (konferens)
2009

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Martin Fagerlind, Herbert Zirath, Niklas Rorsman
Semiconductor Science and Technology. Vol. 24 (4), p. 045014-
Artikel i vetenskaplig tidskrift
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Artikel i vetenskaplig tidskrift
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Artikel i vetenskaplig tidskrift
2009

S-band discrete and MMIC GaN power amplifiers

Joakim Nilsson, Niklas Billström, Niklas Rorsman et al
European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009, p. 495-498
Paper i proceeding
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Artikel i vetenskaplig tidskrift
2008

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

Vincent Desmaris, Jin-Yu Shiu, Niklas Rorsman et al
Solid-State Electronics. Vol. 52, p. 632-636
Artikel i vetenskaplig tidskrift
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper i proceeding
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
International Microwave Symposium Digest, 2008, Atlanta, p. 463-466
Paper i proceeding
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper i proceeding
2008

GaN MMIC power amplifiers for S-band and X- band

Erwin M. Suijker, Mattias Sudow, Martin Fagerlind et al
38th European Microwave Conference, EuMC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008, p. 297-300
Paper i proceeding
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Artikel i vetenskaplig tidskrift
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper i proceeding
2008

Influence of gate position on dispersion characteristics of GaN HEMTs

Martin Fagerlind, Herbert Zirath, Urban Forsberg et al
WOCSDICE 2008, Abstract book, p. 99-100
Paper i proceeding
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Artikel i vetenskaplig tidskrift
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Artikel i vetenskaplig tidskrift
2007

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

Jin-Yu Shiu, Vincent Desmaris, Niklas Rorsman et al
Semicronductor Science and Technology. Vol. 22, p. 717-721
Artikel i vetenskaplig tidskrift
2007

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Hans Hjelmgren, Kristoffer Andersson, Joakim Eriksson et al
Solid-State Electronics. Vol. 51 (8), p. 1144-1152
Artikel i vetenskaplig tidskrift
2007

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Jin-Yu Shiu, Jui-Chien Huang, Vincent Desmaris et al
IEEE Electron Device Letters. Vol. 28 (6), p. 476-478
Artikel i vetenskaplig tidskrift
2006

A highly linear double balanced Schottky diode S-band mixer

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
IEEE Microwave and Wireless Components Letters. Vol. 16 (6), p. 336 - 8
Artikel i vetenskaplig tidskrift
2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Anders Mellberg, Niklas Rorsman et al
Solid State Electronics. Vol. 50 (5), p. 858-864
Artikel i vetenskaplig tidskrift
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Niklas Billström et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Artikel i vetenskaplig tidskrift
2006

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs with sputter PVD or plasma enhanced CVD grown silicon nitride (SiNx) passivation layer

Jin-Yu Shiu, Vincent Desmaris, Niklas Rorsman et al
WOCSDICE 2006 Proceedings, Fiskebäckskil 2006
Paper i proceeding
2006

Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs

Iltcho Angelov, Kristoffer Andersson, D Schreuers et al
IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan, p. 279-282
Paper i proceeding
2006

SiC MESFET with a Double Gate Recess

Per-Åke Nilsson, Niklas Rorsman, Mattias Sudow et al
Materials Science Forum. Vol. 527-529, p. 1227-1230
Paper i proceeding
2006

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers

Vincent Desmaris, Mariusz Rudzinski, Niklas Rorsman et al
IEEE Transactions on Electron Devices. Vol. 53 (9), p. 2413-17
Artikel i vetenskaplig tidskrift
2006

Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Jin-Yu Shiu, Chung-Lu Lu et al
Journal of Applied Physics. Vol. 100 (3), p. 34904-1-4-
Artikel i vetenskaplig tidskrift
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Kristoffer Andersson, Mattias Sudow, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Artikel i vetenskaplig tidskrift
2005

DC and RF performance of MESFET mode 4H-SiC Static Induction transistor

Dimitar Milkov Dochev, Kristina Dynefors, Vincent Desmaris et al
GHz2005
Paper i proceeding
2005

The Chalmers microstrip SiC MMIC Process

Mattias Sudow, Kristoffer Andersson, Per-Åke Nilsson et al
Conference Proceedings Gighahertz 2005
Paper i proceeding
2005

Planar Schottky Microwave Diodes on 4H-SiC

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Materials Science Forum. Vol. 483-485, p. 937-940
Paper i proceeding
2005

Fabrication and Characterization of AlGaN/GaN HEMTs

Vincent Desmaris, Niklas Rorsman
Rapport
2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Mikael Malmkvist, Anders Mellberg, Jan Grahn et al
16th International Conference on Indium Phosphide and Related Materials, p. 386-388
Paper i proceeding
2004

Fabrication and characterization of reactively sputtered TaN thin film resistors for millimeter wave applications

Anders Mellberg, Samuel P. Nicols, Niklas Rorsman et al
Electrochemical and Solid State Letters. Vol. 7 (11), p. G261-3
Artikel i vetenskaplig tidskrift
2004

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Materials Science Forum. Vol. 457-460 (2), p. 1629-
Paper i proceeding
2004

Planar SiC Schottky Diodes for MMIC Applications

Mattias Sudow, Niklas Rorsman, Per-Åke Nilsson et al
Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). Vol. 1, p. 153-156
Artikel i vetenskaplig tidskrift
2004

Processing of RF-MEMS Switches

Ros-Marie Lundh, Yangjian Chen, Shimul Chandra Saha et al
MEMSWAVE, June 30-July 2, 2004, Uppsala, Sweden
Paper i proceeding
2004

Cryogenic 2--4 GHz ultra low noise amplifier

Anders Mellberg, Niklas Wadefalk, Iltcho Angelov et al
IEEE MTT-S International Microwave Symposium Digest, p. 161-163
Paper i proceeding
2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Anders Mellberg, Mikael Malmkvist, Jan Grahn et al
Proc. 34th European Microwave Conf., p. 171-174
Paper i proceeding
2004

Simple self-aligned fabrication process for silicon carbide static induction transistors

Kristina Dynefors, Vincent Desmaris, Joakim Eriksson et al
Materials Science Forum. Vol. 457-460, p. 1125-
Artikel i vetenskaplig tidskrift
2004

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
Electrochemical and Solid-State Letters. Vol. 7 (4), p. G72-
Artikel i vetenskaplig tidskrift
2003

Research and development of AlGaN/GaN HEMTs

Vincent Desmaris, Joakim Eriksson, Niklas Rorsman et al
GHz2003
Paper i proceeding
2003

research and development of SiC Static Induction transistor

Kristina Dynefors, Vincent Desmaris, Joakim Eriksson et al
GHz2003 conference, Linköping 2003
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2003

C-Band Linear Resistive Wide Bandgap FET Mixers

Kristoffer Andersson, Vincent Desmaris, Joakim Eriksson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2, p. 8-
Paper i proceeding
2002

Resistive SiC-MESFET mixer

Kristoffer Andersson, Joakim Eriksson, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 12 (4), p. 119-121
Artikel i vetenskaplig tidskrift
2001

Research and development of AlGaN/GaN HEMTs

Vincent Desmaris, Kristina Dynefors, Joakim Eriksson et al
GHZ2001
Paper i proceeding
1993

W-band subharmonically pumped resistive mixer based on pseudomorphic heterostructure field effect transistor technology

Herbert Zirath, Iltcho Angelov, Niklas Rorsman et al
Proceedings of the 1993 IEEE MTT-S International Microwave Symposium Digest. Vol. 1, p. 341-344
Paper i proceeding
1993

F-band resistive mixer based on heterostructure field effect transistor technology

Iltcho Angelov, Herbert Zirath, Niklas Rorsman et al
Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems. Vol. 2, p. 787-790
Paper i proceeding
1993

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Niklas Rorsman, Christer Karlsson, Herbert Zirath et al
23rd European Solid State Device Research Conference, ESSDERC 1993, p. 765-768
Paper i proceeding
1992

A new empirical nonlinear model for HEMT-devices

Iltcho Angelov, Herbert Zirath, Niklas Rorsman
1992 IEEE MTT-S International Microwave Symposium Digest. Vol. 3, p. 1583-1586
Paper i proceeding
1992

A balanced millimeter wave doubler based on pseudomorphic HEMTs

Iltcho Angelov, Herbert Zirath, Niklas Rorsman et al
1992 IEEE MTT-S International Microwave Symposium Digest. Vol. 1, p. 353-356
Paper i proceeding
1992

A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology

Herbert Zirath, Iltcho Angelov, Niklas Rorsman
1992 IEEE MTT-S International Microwave Symposium Digest. Vol. 2, p. 599-602
Paper i proceeding
1992

Characteristics of a millimeter wave drain mixer

Herbert Zirath, Iltcho Angelov, Niklas Rorsman et al
Proceedings of the 22nd European Microwave Conference. Vol. 2 (22), p. 987-992
Paper i proceeding
1992

HFET millimeterwave resistive mixer

Herbert Zirath, Iltcho Angelov, Niklas Rorsman
Proceedings of the 22nd European Microwave Conference. Vol. 1 (22), p. 614-619
Paper i proceeding
1991

New method for determination of the peak-velocity in epitaxial semiconductor structures by dc measurements on microbridges

W. Strupinski, Herbert Zirath, Hans Grönqvist et al
Applied Physics Letters. Vol. 59 (24), p. 3151-3153
Artikel i vetenskaplig tidskrift
1991

Resistive HEMT-mixer with very low LO-power requirements and low intermodulation

Herbert Zirath, Niklas Rorsman
European Microwave Conference. Vol. 2, p. 1469-1474
Paper i proceeding

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Visar 10 forskningsprojekt

2018–2022

III-nitrider med låg defekttäthet för grön kraftelektronik

Niklas Rorsman Mikrovågselektronik
Stiftelsen för Strategisk forskning (SSF)

2016–2017

Kompakt Millimetervågsbyggsätt för Framtidens Kommunikations- och Sensorsystem (Förstudie)

Mattias Thorsell Mikrovågselektronik
Christian Fager Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
Koen Buisman Mikrovågselektronik
VINNOVA

2016–2017

VR LiU Trapping

Niklas Rorsman Mikrovågselektronik
Vetenskapsrådet (VR)

2014–2017

HPM-skydd av AESA baserat på GaN

Niklas Rorsman Mikrovågselektronik
VINNOVA

2014–2018

Bridging the THz-gap

Herbert Zirath Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
Tommy Ive Fotonik
Anna Malmros Mikrovågselektronik
Knut och Alice Wallenbergs Stiftelse

2014–2017

Indium nitrid baserad millimetervågs- och THz-elektronik för kommunikations- och sensorsystem

Niklas Rorsman Mikrovågselektronik
Tommy Ive Fotonik
Vetenskapsrådet (VR)

2013–2017

Energieffektiva millimetervågssändare

Christian Fager Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
Dan Kuylenstierna Mikrovågselektronik
William Hallberg Mikrovågselektronik
Herbert Zirath Mikrovågselektronik
Mattias Thorsell Mikrovågselektronik
VINNOVA

2012–2017

The Swedish Graphene Initiative

Mikael Fogelström Tillämpad kvantfysik
Floriana Lombardi Kvantkomponentfysik
Avgust Yurgens Kvantkomponentfysik
Herbert Zirath Mikrovågselektronik
Jan Stake Terahertz- och millimetervågsteknik
Elsebeth Schröder Kvantkomponentfysik
Jari Kinaret Kondenserade materiens teori
Sergey Kubatkin Kvantkomponentfysik
Tomas Löfwander Tillämpad kvantfysik
Eva Olsson Eva Olsson Group
Andreas Isacsson Kondenserade materiens teori
Niklas Rorsman Mikrovågselektronik
Knut och Alice Wallenbergs Stiftelse

2011–2016

GaN- baserad elektronik för framtidens mikrovågssystem

Niklas Rorsman Mikrovågselektronik
Herbert Zirath Mikrovågselektronik
Stiftelsen för Strategisk forskning (SSF)

2011–2014

Högtemperaturstabil metallisering och kapsling av WBG komponenter för tillämpningar i krävande miljöer

Niklas Rorsman Mikrovågselektronik
Vetenskapsrådet (VR)

Det kan finnas fler projekt där Niklas Rorsman medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.