Niklas Rorsman

Short Term Drift in the Recovery Time of GaN HEMT Switches

On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs

2024

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

2024

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

2023

GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures

2023

Investigation of Isolation Approaches and the Stoichiometry of SiN<inf>x</inf> Passivation Layers in “Buffer-Free” AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

2023

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Transition Time of GaN HEMT Switches and its Dependence on Device Geometry

2023

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

2023

Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures

2023

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

2023

Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

2022

A Cryogenic Scalable Small-Signal &amp; Noise Model of GaN HEMTs

2022

GaN HEMT with superconducting Nb gates for low noise cryogenic applications

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

2022

Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors

Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiN<inf>x</inf>First Passivation

Considerations in the development of a gate process module for ultra-scaled GaN HEMTs

2022

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE^® Structure

Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer

2021

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and Ga2O3 Gate Insulator Layer

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

On the delay implementation in FET Large Signal Models

Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC

A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

2019

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

2019

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

2018

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

2018

A GaN-SiC hybrid material for high-frequency and power electronics

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Analysis of Thermal Effects in Integrated Radio Transmitters

A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Design and Large-Signal Characterization of High-Power Varactor-Based Impedance Tuners

A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer

2017

Novel Low-Loss Millimeter- Wave Transition From Waveguide-to-Microstrip Line Suitable for MMIC Integration and Packaging

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

2017

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Tuning epitaxial graphene sensitivity to water by hydrogen intercalation

Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems

Low density of near-interface traps at the Al2O3/4H-SiC interface with Al2O3 made by low temperature oxidation of Al

2017

High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Graphene FET Gigabit On-Off Keying Demodulator at 96 GHz

Developing Graphene based MMICs on SiC substrate

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

2016

Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Carbon-doped GaN on SiC materials for low-memory-effect devices

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers

2015

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

2015

Graphene self-switching diodes as zero-bias microwave detectors

2015

Hysteresis modeling in graphene field effect transistors

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

High linearity MMIC power amplifier design with controlled junction temperature

High gain graphene field effect transistors for wideband amplifiers

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation

Thermal conductivity of isotopically enriched silicon carbide

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

2013

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

Improved GaN-on-SiC transistor thermal resistance by systematic nucleation layer growth optimization

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

2012

Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Combined TiN- and TaN temperature compensated thin film resistors

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Electrothermal Access Resistance Model for GaN-Based HEMTs

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

High performance GaN front-end MMICs

2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Optimization of SiC MESFET for high power and high frequency applications

Epitaxial and Layout Optimization of SiC Microwave Power Varactors

High efficiency RF pulse width modulation with tunable load network class-E PA

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

2011

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator

IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING

Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

An X-Band AlGaN/GaN MMIC Receiver Front-End

Characterization of Electro-Thermal Effects in GaN Based HEMTs

TiN thin film resistors for monolithic microwave integrated circuits

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

S-band discrete and MMIC GaN power amplifiers

Thermal Study of the High-Frequency Noise in GaN HEMTs

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

Influence of gate position on dispersion characteristics of GaN HEMTs

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

GaN MMIC power amplifiers for S-band and X- band

GaN Device and MMIC development at Chalmers

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

SiC MESFET with a Double Gate Recess

Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers

Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs

A highly linear double balanced Schottky diode S-band mixer

An SiC MESFET-based MMIC process

Comparison of the DC and microwave performance of AlGaN/GaN HEMTs with sputter PVD or plasma enhanced CVD grown silicon nitride (SiNx) passivation layer

Fabrication and characterization of field-plated buried-gate SiC MESFETs

The Chalmers microstrip SiC MMIC Process

DC and RF performance of MESFET mode 4H-SiC Static Induction transistor

Fabrication and Characterization of AlGaN/GaN HEMTs

Planar Schottky Microwave Diodes on 4H-SiC

Cryogenic 2--4 GHz ultra low noise amplifier

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Simple self-aligned fabrication process for silicon carbide static induction transistors

Fabrication and characterization of reactively sputtered TaN thin film resistors for millimeter wave applications

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Processing of RF-MEMS Switches

Planar SiC Schottky Diodes for MMIC Applications

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Research and development of AlGaN/GaN HEMTs

research and development of SiC Static Induction transistor

C-Band Linear Resistive Wide Bandgap FET Mixers

Resistive SiC-MESFET mixer

Research and development of AlGaN/GaN HEMTs

Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

W-band subharmonically pumped resistive mixer based on pseudomorphic heterostructure field effect transistor technology

Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

F-band resistive mixer based on heterostructure field effect transistor technology

A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology

A balanced millimeter wave doubler based on pseudomorphic HEMTs

Characteristics of a millimeter wave drain mixer

HFET millimeterwave resistive mixer

A new empirical nonlinear model for HEMT-devices

Resistive HEMT-mixer with very low LO-power requirements and low intermodulation

New method for determination of the peak-velocity in epitaxial semiconductor structures by dc measurements on microbridges