High-gain graphene transistors with a thin AlO x top-gate oxide
Artikel i vetenskaplig tidskrift, 2017

The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max/f T > 3, A v > 30 dB, and S 21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.

Författare

Aida Mansouri

Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Omid Habibpour

Mikrovågselektronik

Scientific Reports

2045-2322 (ISSN)

Vol. 7 1 1-7 2419 (2017)

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Cell- och molekylärbiologi

Skogsvetenskap

Annan medicinsk grundvetenskap

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2021-04-14