Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Paper i proceeding, 2011
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
Power consumption
high dynamic range
OIP3
GaN HEMT transistor
Linearity
Gain
Författare
Pirooz Chehrenegar
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Olle Axelsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Grahn
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jonathan Felbinger
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Kristoffer Andersson
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011
5773310
978-145770649-3 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/INMMIC.2011.5773310
ISBN
978-145770649-3