Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Paper in proceedings, 2011

In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.

Power consumption

high dynamic range

OIP3

GaN HEMT transistor

Linearity

Gain

Author

Pirooz Chehrenegar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Olle Axelsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jonathan Felbinger

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011

5773310

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/INMMIC.2011.5773310

ISBN

978-145770649-3

More information

Created

10/6/2017