New method for determination of the peak-velocity in epitaxial semiconductor structures by dc measurements on microbridges

Artikel i vetenskaplig tidskrift, 1991

A simple current-voltage measurement technique using microbridge patterns is described as a fast method for the determination of the effective peak electron velocity in III-V semiconducting materials. The method is tested for GaAs samples. Microbridge patterns with different geometries were investigated and the influence of ''self-heating'' by power dissipation was examined. Some other potential sources of errors deteriorating the accuracy of measurements were determined.