Influence of gate position on dispersion characteristics of GaN HEMTs
Paper i proceeding, 2008

GAN HEMTs with varying design have been fabricated to optimize device performance. The focus of this report is the minimization of drain current dispersion by the variation of the electric field distribution. In this work this is done by varying the placement of the gate and to some extent varying gate length and length of the gate connected field plate. We present pulsed IV characteristics for a number of different device designs.

Författare

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Urban Forsberg

Anders Lundskog

Anelia Kakanakova-Gerorgieva

Erik Janzén

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

WOCSDICE 2008, Abstract book

99-100

Ämneskategorier

Annan elektroteknik och elektronik