Electrical characterization of high k-dielectrics for 4H-SiC MIS devices
Artikel i vetenskaplig tidskrift, 2019

We report promising results regarding the possible use of AlN or Al 2 O 3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 °C. The amorphous Al 2 O 3 films are grown by repeated deposition and subsequent low temperature (200 °C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al 2 O 3 /4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al 2 O 3 is ∼ 3 MV/cm or ∼ 5 MV/cm respectively. By depositing an additional SiO 2 layer by plasma enhanced chemical vapor deposition at 300 °C on top of the AlN or Al 2 O 3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al 2 O 3 /SiC interfaces.

Interface traps

AlN/4H-SiC interface

Al O /4H-SiC interface 2 3

MIS structure

Författare

Rabia Y. Khosa

Háskóli Íslands

University of Education

J. T. Chen

Linköpings universitet

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

K. Pálsson

Háskóli Íslands

Robin Karhu

Linköpings universitet

J. Hassan

Linköpings universitet

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Einar Sveinbjӧrnsson

Linköpings universitet

Háskóli Íslands

Materials Science in Semiconductor Processing

1369-8001 (ISSN)

Vol. 98 55-58

Ämneskategorier

Oorganisk kemi

Materialkemi

Den kondenserade materiens fysik

DOI

10.1016/j.mssp.2019.03.025

Mer information

Senast uppdaterat

2019-08-19