A new empirical nonlinear model for HEMT-devices
Paper i proceeding, 1992

A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.


Iltcho Angelov

Institutionen för mikrovågsteknik

Herbert Zirath

Institutionen för mikrovågsteknik

Niklas Rorsman

Institutionen för mikrovågsteknik

1992 IEEE MTT-S International Microwave Symposium Digest

0149-645X (ISSN)

Vol. 3 1583-1586


Informations- och kommunikationsteknik


Annan elektroteknik och elektronik