A new empirical nonlinear model for HEMT-devices
Paper in proceeding, 1992

A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.


Iltcho Angelov

Department of Microwave Technology

Herbert Zirath

Department of Microwave Technology

Niklas Rorsman

Department of Microwave Technology

1992 IEEE MTT-S International Microwave Symposium Digest

0149-645X (ISSN)

Vol. 3 1583-1586
0780306112 (ISBN)

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering



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