Iltcho Angelov
As a researcher he worked with various microwave devices: Impatt, Gunn, BJT, FET, low noise & power amp., multipliers, oscillators, synchronization &phase modulation, designed transmitter equipment for space applications and earth receiving terminal.
At Chalmers his main activity is related to FET and HBT modeling.
Another area of interest is cryogenic amplifiers, nonlinear circuits: HEMT mixers, multipliers, oscillators, frequency dividers, low noise receivers up to 220 GHz.
Showing 86 publications
On the delay implementation in FET Large Signal Models
Nonlinear active device modeling
A procedure for the extraction of a nonlinear microwave GaN FET model
Octave Band Linear MMIC Amplifier With+40-dBm OIP3 for High-Reliability Space Applications
On the Modeling of High Power FET Transistors
4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications
A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Nonlinear model for 40-GHz cold-FET operation
Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
A GaN MMIC Modified Doherty PA With Large Bandwidth and Reconfigurable Efficiency
Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit
High linearity MMIC power amplifier design with controlled junction temperature
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique
High linear power amplifier for multicarrier satellite communications
Experiment design for quick statistical FET large signal model extraction
A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation
Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator
Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications
Large-Signal Time-Domain Waveform-Based Transistor Modeling
Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation
Multifunction low noise millimeterwave MMICs for remote sensing
On the implementation of device processing tolerances in FET Large Signal Models
On the large-signal modeling of High Power AlGaN/GaN HEMTs
Waveforms-based large-signal identification of transistor models
Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
Identification technique of FET model based on vector nonlinear measurements
A varactor model including valanche noise source for VCOs phase noise simulation
Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna
Large Signal Model and Implementation of Impact Ionization for FET Devices
On the Compact Equivalent Circuit Modeling
Semi-physical nonlinear model for HEMTs with simple equations
On the Large Signal Evaluation and Modeling of GaN FET
A large-signal GaAs HBT model optimized for design of low phase-noise VCOs
Low-phase noise InGaP HBT VCO design
A Broadband 60-to-120 GHz single-chip MMIC multiplier chain
On the status of Low Noise Millimeterwave MMIC Receivers
Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation
On the High Frequency De-Embedding& Modeling of FET Devices
Design of High Efficiency Ka-Band Harmonically Tuned Power Amplifiers
Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
A G-band (140 – 220 GHz) Microstrip MMIC Mixer operating in both Resistive and Drain-Pumped Mode
A 220 GHz Single-Chip Receiver MMIC with Integrated Antenna
Non-linear FinFET Modeling: Lookup Table and Empirical Approaches
Doherty amplifier design for 3.5 GHz WiMAX considering load line and loop stability
Analysis of quasi-static assumption in nonlinear finFET model
A 220 GHz (G-band) Microstrip MMIC Single-Ended Resistive Mixer
Large signal evaluation of nonlinear HBT model
The Direct Detection Effect in the Hot-Electron Bolometer Mixer Sensitivity Calibration
CMOS LARGE SIGNAL and RF Noise MODEL FOR CAD
High Purity 60 GHz-Band Single Chip
Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
Empirical Device Models -Invited
CMOS devices and circuits for microwave and millimeter wave applications
On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs
On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs - Invited
RF noise model for CMOS Transistors
MMICs for Micro and Millimeterwave applications in a 90 nm CMOS technology
MMICs for micro and millimetre wave applications
CMOS devices and circuits for microwave and millimetre wave applications
On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs
4-8 GHz Low Noise Amplifier using Metamorphic HEMT Technology
Effect of the direct detection effect on the HEB receiver sensitivity calibration
An empirical table based HBT large signal model
Cryogenic 2--4 GHz ultra low noise amplifier
CMOS MMICs for microwave and millimeter wave applications
CMOS large signal model for CAD
90-nm CMOS for microwave power applications
Design and Performance of a 3.4 to 4.6 GHz Active Equalizer with Controlled Gain Slope
Extensions of the Chalmers nonlinear HEMT and MESFET model
F-band resistive mixer based on heterostructure field effect transistor technology
A balanced millimeter wave doubler based on pseudomorphic HEMTs
HFET millimeterwave resistive mixer
A new empirical nonlinear model for HEMT-devices
Characteristics of a millimeter wave drain mixer
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