Design of High Efficiency Ka-Band Harmonically Tuned Power Amplifiers
Paper in proceeding, 2009
A harmonically tuned power amplifier (PA)
design approach is presented to provide high efficiency
performance at Ka-band using a GaAs mHEMT device
technology. A single-stage monolithic-microwave integratedcircuit
(MMIC) class-AB PA is designed and measured.
The PA efficiency is optimized for a circuit topology which
allows harmonic load impedance terminations up to the
third harmonic. An output power of 14 dBm is measured
with a small-signal gain of 14 dB and a maximum poweradded-
efficiency (PAE) of 43%. Good agreement between
measurement and simulation results is observed which allows
further investigations through harmonic load-pull simulations
using the in-house large-signal model of the device. It is shown
that the PAE can be further increased to 50% by more careful
second and third harmonic load impedance terminations.
Ka-band
mHEMT
power amplifier
Author
Hossein Mashad Nemati
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ferndahl
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2)
2009 IEEE Radio and Wireless Symposium, RWS 2009; San Diego, CA; United States; 18 January 2008 through 22 January 2008
264-267 4957384
978-142442699-7 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/RWS.2009.4957384
ISBN
978-142442699-7