Design of High Efficiency Ka-Band Harmonically Tuned Power Amplifiers
Paper i proceeding, 2009

A harmonically tuned power amplifier (PA) design approach is presented to provide high efficiency performance at Ka-band using a GaAs mHEMT device technology. A single-stage monolithic-microwave integratedcircuit (MMIC) class-AB PA is designed and measured. The PA efficiency is optimized for a circuit topology which allows harmonic load impedance terminations up to the third harmonic. An output power of 14 dBm is measured with a small-signal gain of 14 dB and a maximum poweradded- efficiency (PAE) of 43%. Good agreement between measurement and simulation results is observed which allows further investigations through harmonic load-pull simulations using the in-house large-signal model of the device. It is shown that the PAE can be further increased to 50% by more careful second and third harmonic load impedance terminations.

Ka-band

mHEMT

power amplifier

Författare

Hossein Mashad Nemati

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2)

2009 IEEE Radio and Wireless Symposium, RWS 2009; San Diego, CA; United States; 18 January 2008 through 22 January 2008

264-267 4957384

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/RWS.2009.4957384

ISBN

978-142442699-7

Mer information

Skapat

2017-10-07