Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
Paper in proceedings, 2009

The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.

millimeterwave receiver MMIC

Author

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

R. Kuzhuharov

Chalmers

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Bertil Hansson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vessen Vassilev

Chalmers, Department of Radio and Space Science, Advanced Receiver Development

J. Svedin

Swedish Defence Research Agency (FOI)

S. Rudner

Swedish Defence Research Agency (FOI)

I. Kallfass

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

A. Leuther

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009; Singapore; Singapore; 9 January 2009 through 11 January 2009

225-228

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/RFIT.2009.5383658

ISBN

978-1-4244-5030-5

More information

Latest update

9/10/2018