On the High Frequency De-Embedding& Modeling of FET Devices
Paper in proceeding, 2009
At millimetre wave frequencies, deembedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.
FET
SS and LS Models
Microstrip
Author
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
K. Kanaya
Mitsubishi Electric Corporation
S. Goto
Mitsubishi Electric Corporation
Morteza Abbasi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
73rd ARFTG Microwave Measurement Conference Spring 2009 - Practical Applications of Nonlinear Measurements; Boston, MA; United States; 12 June 2009 through 12 June 2009
28-31
978-1-4244-3442-8 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ARFTG.2009.5278076
ISBN
978-1-4244-3442-8