On the High Frequency De-Embedding& Modeling of FET Devices
Paper in proceedings, 2009

At millimetre wave frequencies, deembedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.

FET

SS and LS Models

Microstrip

Author

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

K. Kanaya

Mitsubishi Electric Corporation

S. Goto

Mitsubishi Electric Corporation

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

73rd ARFTG Microwave Measurement Conference Spring 2009 - Practical Applications of Nonlinear Measurements; Boston, MA; United States; 12 June 2009 through 12 June 2009

28-31

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ARFTG.2009.5278076

ISBN

978-1-4244-3442-8

More information

Created

10/8/2017