Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
Journal article, 2009
An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
Semiconductor device modeling
device
accurate
fet model
large-signal measurements
FinFET
mosfets
Non-quasi-static effects
parameter extraction
Nonlinear model
Large signal network analyzer
Author
G. Crupi
University of Messina
Dmmp Schreurs
KU Leuven
A. Caddemi
University of Messina
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
M. Homayouni
KU Leuven
A. Raffo
University of Ferrara
G. Vannini
University of Ferrara
B. Parvais
Interuniversity Micro-Electronics Center at Leuven
Microelectronic Engineering
0167-9317 (ISSN)
Vol. 86 11 2283-2289Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.mee.2009.04.006