Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
Artikel i vetenskaplig tidskrift, 2009

An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.

Large signal network analyzer

Non-quasi-static effects

Semiconductor device modeling

fet model

Nonlinear model

parameter extraction

mosfets

device

FinFET

accurate

large-signal measurements

Författare

G. Crupi

Universita degli Studi di Messina

Dmmp Schreurs

KU Leuven

A. Caddemi

Universita degli Studi di Messina

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. Homayouni

KU Leuven

A. Raffo

University of Ferrara

G. Vannini

University of Ferrara

B. Parvais

Interuniversity Micro-Electronics Center at Leuven

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 86 2283-2289

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/j.mee.2009.04.006