Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
Artikel i vetenskaplig tidskrift, 2009

An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.

Semiconductor device modeling



fet model

large-signal measurements



Non-quasi-static effects

parameter extraction

Nonlinear model

Large signal network analyzer


G. Crupi

Universita degli Studi di Messina

Dmmp Schreurs

KU Leuven

A. Caddemi

Universita degli Studi di Messina

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

M. Homayouni

KU Leuven

A. Raffo

University of Ferrara

G. Vannini

University of Ferrara

B. Parvais

Interuniversity Micro-Electronics Center at Leuven

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 86 11 2283-2289


Annan elektroteknik och elektronik



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