On the implementation of device processing tolerances in FET Large Signal Models
Paper in proceeding, 2012
Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.
FET
Statistical Models
Large Signal Models
Author
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ferndahl
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Marcus Gavell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012
6331917
978-146732949-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/INMMIC.2012.6331917
ISBN
978-146732949-1