On the implementation of device processing tolerances in FET Large Signal Models
Paper in proceedings, 2012

Device technology is becoming quite mature and repeatable, but nevertheless, for various reasons, there are statistical variations in device parameters. These process variations will influence the accuracy of the designs and yield in production. The implementation of these variations in Large Signal Models is discussed in the paper.

FET

Statistical Models

Large Signal Models

Author

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Marcus Gavell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012

6331917

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/INMMIC.2012.6331917

ISBN

978-146732949-1

More information

Created

10/8/2017