Octave Band Linear MMIC Amplifier With+40-dBm OIP3 for High-Reliability Space Applications
Journal article, 2016

A systematic design procedure for highly linear and reliable amplifiers is proposed. The procedure deals with non-linear modeling, junction temperature prediction methods, and circuit design techniques. A wideband linear monolithic microwave integrated circuit power amplifier based on a space-qualified GaAs process for C-band and extended C-band multicarrier satellite transponder is reported and described. The amplifier uses a bus-bar combiner in the power stage reaching an output power of 26.7 dBm at 1-dB compression point, with a small signal gain above 25 dB in the operation band between 3 and 6 GHz. The output third-order intercept point reaches levels above 40 dBm. The design ensures high reliability keeping the junction temperature below 112 degrees C.

junction temperature

power amplifier

high linearity

monolithic microwave integrated circuit (MMIC)

nonlinear modeling

C-band

Bus-bar combiner

Author

Oliver Silva Barrera

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 64 7 2059-2067

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/tmtt.2016.2574856

More information

Created

10/7/2017