Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
Paper in proceedings, 2006

The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and provide. a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.

FET LS models

Author

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

D Schreuers

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vincent Desmaris

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan

279-282

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-4-902339-11-6

More information

Created

10/7/2017