Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
Journal article, 2011
A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.
Simulation
Transistor models
Power amplifiers
Physical modeling
GaN HEMT
Microwave
Author
Hiroshi Otsuka
Mitsubishi Electric Corporation
Toshiyuki Oishi
Mitsubishi Electric Corporation
Koji Yamanaka
Mitsubishi Electric Corporation
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. Inoue
Mitsubishi Electric Corporation
Yoshihito Hirano
Mitsubishi Electric Corporation
Iltcho Angelov
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
International Journal of Microwave and Wireless Technologies
1759-0787 (ISSN) 1759-0795 (eISSN)
Vol. 3 1 25-33Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1017/S1759078711000043