Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
Artikel i vetenskaplig tidskrift, 2011

A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.


Transistor models

Power amplifiers

Physical modeling




Hiroshi Otsuka

Mitsubishi Electric Corporation

Toshiyuki Oishi

Mitsubishi Electric Corporation

Koji Yamanaka

Mitsubishi Electric Corporation

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Inoue

Mitsubishi Electric Corporation

Yoshihito Hirano

Mitsubishi Electric Corporation

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

International Journal of Microwave and Wireless Technologies

1759-0787 (ISSN)

Vol. 3 1 25-33


Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik


Annan elektroteknik och elektronik

Den kondenserade materiens fysik



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