Mattias Thorsell
Visar 99 publikationer
On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs
Dynamic Thermal Coupling in GaN MMIC Power Amplifiers
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements
Characterization and Modeling of Dynamic Thermal Coupling in GaN MMIC Power Amplifiers
Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs
Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements
Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures
Transition Time of GaN HEMT Switches and its Dependence on Device Geometry
Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs
GaN HEMT with superconducting Nb gates for low noise cryogenic applications
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE<sup>®</sup> Structure
Analyzing the Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model
Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer
Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
Nonlinear active device modeling
Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures
Thermal characteristics of vertically-integrated GaN/SiC-on-Si assemblies: A comparative study
Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Analysis of Lateral Thermal Coupling for GaN MMIC Technologies
Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential
Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers
A GaN-SiC hybrid material for high-frequency and power electronics
Analysis of Thermal Effects in Integrated Radio Transmitters
Differential Transmission Line Loop for RFID Reactive Near-Field Coupling
Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals
Design Equations for Lumped Element Balun With Inherent Complex Impedance Transformation
Lumped element balun with inherent complex impedance transformation
Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise
Accurate Circuit Characterization Methods for mm‐Wave 5G Systems
On the Modeling of High Power FET Transistors
Wideband RF characterization setup with high dynamic range low frequency measurement capabilities
Carbon-doped GaN on SiC materials for low-memory-effect devices
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Symmetry based nonlinear model for GaN HEMTs
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
An Oscilloscope Correction Method for Vector-Corrected RF Measurements
Symmetry based Nonlinear Model for GaN
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Symmetrical modeling of GaN HEMTS
Symmetrical Large-Signal Modeling of Microwave Switch FETs
Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup
A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates
Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
A Novel Active Load-pull System with Multi-Band Capabilities
A novel technique for GaN HEMT trap states characterisation
Differential Impedance Measurement Method of RFID Transponder Chips at UHF
Fast Multi Harmonic Active Load-Pull
Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities
Noise temperature of an electronic tuner for noise parameter measurement systems
On the large-signal modeling of High Power AlGaN/GaN HEMTs
Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Electrothermal Access Resistance Model for GaN-Based HEMTs
Large-signal waveform acquisition of pulsed signals
Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices
Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
High efficiency RF pulse width modulation with tunable load network class-E PA
Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers
Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull
Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
On the Compact Equivalent Circuit Modeling
An X-Band AlGaN/GaN MMIC Receiver Front-End
Characterization of Electro-Thermal Effects in GaN Based HEMTs
On the Large Signal Evaluation and Modeling of GaN FET
Active Harmonic Load-Pull using LSNA
Characterization Setup for Device Level Dynamic Load Modulation Measurements
High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model
Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters
An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz
Thermal Study of the High-Frequency Noise in GaN HEMTs
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
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Visar 5 forskningsprojekt
Affordable smart GaN IC solutions as enabler of greener applications (ALL2GaN)
Kompakt Millimetervågsbyggsätt för Framtidens Kommunikations- och Sensorsystem (Förstudie)
Metrology for 5G communications MET5G
Energieffektiva millimetervågssändare