Mattias Thorsell
Visar 81 publikationer
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Analyzing the Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model
Thin Al
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers
Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
Thermal characteristics of vertically-integrated GaN/SiC-on-Si assemblies: A comparative study
Nonlinear active device modeling
Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures
Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential
Differential Transmission Line Loop for RFID Reactive Near-Field Coupling
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers
A GaN-SiC hybrid material for high-frequency and power electronics
Analysis of Thermal Effects in Integrated Radio Transmitters
Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias
Analysis of Lateral Thermal Coupling for GaN MMIC Technologies
Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals
Lumped element balun with inherent complex impedance transformation
Design Equations for Lumped Element Balun With Inherent Complex Impedance Transformation
On the Modeling of High Power FET Transistors
Carbon-doped GaN on SiC materials for low-memory-effect devices
Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
Accurate Circuit Characterization Methods for mm‐Wave 5G Systems
Wideband RF characterization setup with high dynamic range low frequency measurement capabilities
Symmetry based nonlinear model for GaN HEMTs
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
An Oscilloscope Correction Method for Vector-Corrected RF Measurements
Symmetry based Nonlinear Model for GaN
The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
Symmetrical modeling of GaN HEMTS
Symmetrical Large-Signal Modeling of Microwave Switch FETs
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
A Novel Active Load-pull System with Multi-Band Capabilities
Differential Impedance Measurement Method of RFID Transponder Chips at UHF
A novel technique for GaN HEMT trap states characterisation
A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates
Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup
Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities
Fast Multi Harmonic Active Load-Pull
Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Noise temperature of an electronic tuner for noise parameter measurement systems
On the large-signal modeling of High Power AlGaN/GaN HEMTs
Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers
Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull
Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
Electrothermal Access Resistance Model for GaN-Based HEMTs
Large-signal waveform acquisition of pulsed signals
Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices
High efficiency RF pulse width modulation with tunable load network class-E PA
On the Large Signal Evaluation and Modeling of GaN FET
On the Compact Equivalent Circuit Modeling
An X-Band AlGaN/GaN MMIC Receiver Front-End
Characterization of Electro-Thermal Effects in GaN Based HEMTs
Characterization Setup for Device Level Dynamic Load Modulation Measurements
An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz
High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model
Thermal Study of the High-Frequency Noise in GaN HEMTs
Active Harmonic Load-Pull using LSNA
Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
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Visar 4 forskningsprojekt
Kompakt Millimetervågsbyggsätt för Framtidens Kommunikations- och Sensorsystem (Förstudie)
Metrology for 5G communications MET5G
Energieffektiva millimetervågssändare