Mattias Thorsell

2023

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer-Free” AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

2023

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

2023

GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

2023

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures

GaN HEMT with superconducting Nb gates for low noise cryogenic applications

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiNxFirst Passivation

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Analyzing the Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model

Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE^® Structure

Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Thermal characteristics of vertically-integrated GaN/SiC-on-Si assemblies: A comparative study

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

Nonlinear active device modeling

Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures

Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential

Differential Transmission Line Loop for RFID Reactive Near-Field Coupling

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

2018

A GaN-SiC hybrid material for high-frequency and power electronics

Analysis of Thermal Effects in Integrated Radio Transmitters

Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

2017

Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals

Lumped element balun with inherent complex impedance transformation

Design Equations for Lumped Element Balun With Inherent Complex Impedance Transformation

On the Modeling of High Power FET Transistors

Carbon-doped GaN on SiC materials for low-memory-effect devices

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Shifted Source Impedance and Nonlinearity Impact on RFID Transponder Communication for Drive-Level Offsets

Accurate Circuit Characterization Methods for mm‐Wave 5G Systems

Wideband RF characterization setup with high dynamic range low frequency measurement capabilities

Symmetry based nonlinear model for GaN HEMTs

2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

An Oscilloscope Correction Method for Vector-Corrected RF Measurements

Symmetry based Nonlinear Model for GaN

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Symmetrical modeling of GaN HEMTS

Symmetrical Large-Signal Modeling of Microwave Switch FETs

2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

A Novel Active Load-pull System with Multi-Band Capabilities

Differential Impedance Measurement Method of RFID Transponder Chips at UHF

A novel technique for GaN HEMT trap states characterisation

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup

Hybrid measurement-based extraction of consistent large-signal models for microwave FETs

Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities

Fast Multi Harmonic Active Load-Pull

A new baseband measurement system for characterization of memory effects in nonlinear microwave devices

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Noise temperature of an electronic tuner for noise parameter measurement systems

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers

Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

2011

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Electrothermal Access Resistance Model for GaN-Based HEMTs

Large-signal waveform acquisition of pulsed signals

2011

Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

High efficiency RF pulse width modulation with tunable load network class-E PA

On the Large Signal Evaluation and Modeling of GaN FET

On the Compact Equivalent  Circuit  Modeling

An X-Band AlGaN/GaN MMIC Receiver Front-End

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Characterization Setup for Device Level Dynamic Load Modulation Measurements

An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz

High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model

Thermal Study of the High-Frequency Noise in GaN HEMTs

Active Harmonic Load-Pull using LSNA

2009

Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer