Mattias Thorsell

Gästforskare vid Elektronikmaterial

Källa: chalmers.se
Image of Mattias Thorsell

Visar 101 publikationer

2024

Short Term Drift in the Recovery Time of GaN HEMT Switches

Andreas Divinyi, Niklas Rorsman, Niklas Billström et al
2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024, p. 6-9
Paper i proceeding
2024

On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs

Andreas Divinyi, Torbjörn M.J. Nilsson, Niklas Rorsman et al
IEEE Transactions on Components, Packaging and Manufacturing Technology. Vol. 14 (5), p. 891-896
Artikel i vetenskaplig tidskrift
2024

Dynamic Thermal Coupling in GaN MMIC Power Amplifiers

Tobias Kristensen, Torbjörn M.J. Nilsson, Andreas Divinyi et al
IEEE Transactions on Microwave Theory and Techniques. Vol. In Press
Artikel i vetenskaplig tidskrift
2024

Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements

Tobias Kristensen, Torbjörn M.J. Nilsson, Andreas Divinyi et al
IEEE Transactions on Electron Devices. Vol. In Press
Artikel i vetenskaplig tidskrift
2024

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Björn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo et al
IEEE Transactions on Electron Devices. Vol. In Press
Artikel i vetenskaplig tidskrift
2024

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Ragnar Ferrand-Drake Del Castillo, Ding Yuan Chen, J. T. Chen et al
IEEE Transactions on Electron Devices. Vol. 71 (6), p. 3596-3602
Artikel i vetenskaplig tidskrift
2024

Characterization and Modeling of Dynamic Thermal Coupling in GaN MMIC Power Amplifiers

Tobias Kristensen, Torbjörn M.J. Nilsson, Andreas Divinyi et al
IEEE MTT-S International Microwave Symposium Digest, p. 1053-1056
Paper i proceeding
2024

Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs

Johan Bremer, Niklas Rorsman, Mattias Thorsell
IEEE International Conference on Microelectronic Test Structures
Paper i proceeding
2023

Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements

Tobias Kristensen, Andreas Divinyi, Johan Bremer et al
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 293-296
Paper i proceeding
2023

GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al
Physica Status Solidi (A) Applications and Materials Science. Vol. 220 (8)
Artikel i vetenskaplig tidskrift
2023

Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures

Ding-Yuan Chen, Kai-Hsin Wen, Mattias Thorsell et al
Physica Status Solidi (A) Applications and Materials Science. Vol. 220 (16)
Artikel i vetenskaplig tidskrift
2023

Investigation of Isolation Approaches and the Stoichiometry of SiN<inf>x</inf> Passivation Layers in “Buffer-Free” AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Björn Hult, Mattias Thorsell, J. T. Chen et al
Physica Status Solidi (A) Applications and Materials Science. Vol. 220 (8)
Artikel i vetenskaplig tidskrift
2023

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Denis Meledin et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 71 (5), p. 1923-1931
Artikel i vetenskaplig tidskrift
2023

Transition Time of GaN HEMT Switches and its Dependence on Device Geometry

Andreas Divinyi, Niklas Rorsman, Niklas Billström et al
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 46-49
Paper i proceeding
2023

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

A. Papamichail, A. R. Persson, Steffen Richter et al
Applied Physics Letters. Vol. 122 (15)
Artikel i vetenskaplig tidskrift
2023

Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 29-32
Paper i proceeding
2022

A Cryogenic Scalable Small-Signal &amp; Noise Model of GaN HEMTs

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
Paper i proceeding
2022

GaN HEMT with superconducting Nb gates for low noise cryogenic applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al
2022 Compound Semiconductor Week, CSW 2022
Paper i proceeding
2022

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Chen Ding Yuan, Axel R. Persson, Kai-Hsin Wen et al
Semiconductor Science and Technology. Vol. 37 (3)
Artikel i vetenskaplig tidskrift
2022

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

Björn Hult, Mattias Thorsell, J. T. Chen et al
IEEE Electron Device Letters. Vol. 43 (5), p. 781-784
Artikel i vetenskaplig tidskrift
2022

Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

A. Papamichail, A. R. Persson, Steffen Ricther et al
2022 Compound Semiconductor Week, CSW 2022
Paper i proceeding
2022

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiN<inf>x</inf>First Passivation

Björn Hult, Mattias Thorsell, J. T. Chen et al
2022 Compound Semiconductor Week, CSW 2022
Paper i proceeding
2021

Thin Al<inf>0.5</inf>Ga<inf>0.5</inf>N/GaN HEMTs on QuanFINE<sup>®</sup> Structure

Chen Ding Yuan, Kai-Hsin Wen, Mattias Thorsell et al
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, p. 153-155
Paper i proceeding
2021

Analyzing the Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model

Ankur Prasad, Mattias Thorsell, Herbert Zirath et al
2021 IEEE MTT-S International Microwave and RF Conference, IMARC 2021
Paper i proceeding
2020

Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer

Kimmo Rasilainen, Torbjurn M.J. Nilsson, Johan Bremer et al
2020 26th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2020 - Proceedings
Paper i proceeding
2020

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 67 (6), p. 2297-2303
Artikel i vetenskaplig tidskrift
2020

Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Johan Bremer, Chen Ding Yuan, Aleksandra Malko et al
IEEE Transactions on Electron Devices. Vol. 67 (5), p. 1952-1958
Artikel i vetenskaplig tidskrift
2020

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Ding Yuan Chen, Anna Malmros, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 41 (6), p. 828-831
Artikel i vetenskaplig tidskrift
2019

Nonlinear active device modeling

Iltcho Angelov, Mattias Thorsell
Radio Frequency and Microwave Power Amplifiers: Principles, Device Modeling and Matching Networks, p. 73-165
Kapitel i bok
2019

Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures

Vincent Desmaris, Denis Meledin, Erik Sundin et al
ISSTT 2019 - 30th International Symposium on Space Terahertz Technology, Proceedings Book, p. 67-68
Paper i proceeding
2019

Thermal characteristics of vertically-integrated GaN/SiC-on-Si assemblies: A comparative study

Kimmo Rasilainen, Per Ingelhag, Peter Melin et al
Proceedings - Electronic Components and Technology Conference. Vol. 2019-May, p. 1405-1412
Paper i proceeding
2019

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

Anna Malmros, P. Gamarra, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 66 (1), p. 364-371
Artikel i vetenskaplig tidskrift
2018

Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias

Lowisa Hanning, Johan Bremer, Marie Strom et al
2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018. Vol. 1
Paper i proceeding
2018

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Johan Bremer, Johan Bergsten, Lowisa Hanning et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (10), p. 4430-4438
Artikel i vetenskaplig tidskrift
2018

Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential

Ankur Prasad, Mattias Thorsell, Herbert Zirath et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (2), p. 845-857
Artikel i vetenskaplig tidskrift
2018

Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias

Johan Bremer, Lowisa Hanning, Niklas Rorsman et al
2018 48th European Microwave Conference, EuMC 2018, p. 1213-1216
Paper i proceeding
2018

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Artikel i vetenskaplig tidskrift
2018

A GaN-SiC hybrid material for high-frequency and power electronics

J. T. Chen, Johan Bergsten, Jun Lu et al
Applied Physics Letters. Vol. 113 (4)
Artikel i vetenskaplig tidskrift
2018

Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Tongde Huang, Johan Bergsten, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 65 (3), p. 908-914
Artikel i vetenskaplig tidskrift
2018

Analysis of Thermal Effects in Integrated Radio Transmitters

Christian Fager, Mattias Thorsell, Emanuel Baptista et al
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Paper i proceeding
2018

Differential Transmission Line Loop for RFID Reactive Near-Field Coupling

Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (5), p. 2141-2153
Artikel i vetenskaplig tidskrift
2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Artikel i vetenskaplig tidskrift
2017

Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals

Sebastian Gustafsson, Mattias Thorsell, Koen Buisman et al
IEEE MTT-S International Microwave Symposium Digest, p. 1433-1436
Paper i proceeding
2017

Design Equations for Lumped Element Balun With Inherent Complex Impedance Transformation

Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5162-5170
Artikel i vetenskaplig tidskrift
2017

Lumped element balun with inherent complex impedance transformation

Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE MTT-S International Microwave Symposium Digest, p. 1285-1288
Paper i proceeding
2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Olle Axelsson, Niklas Billström, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Artikel i vetenskaplig tidskrift
2016

Accurate Circuit Characterization Methods for mm‐Wave 5G Systems

Sebastian Gustafsson, Mattias Thorsell, Jörgen Stenarson et al
GigaHertz Symposium, March, Linköping
Övrigt konferensbidrag
2016

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process

Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Artikel i vetenskaplig tidskrift
2016

Shifted Source Impedance and Nonlinearity Impact on RFID Transponder Communication for Drive-Level Offsets

Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 64 (1), p. 299 - 309
Artikel i vetenskaplig tidskrift
2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Reviewartikel
2016

On the Modeling of High Power FET Transistors

Iltcho Angelov, Mattias Thorsell, Marcus Gavell et al
2016 11th European Microwave Integrated Circuits Conference (Eumic), London, England, Oct 03-04, 2016, p. 245-248
Paper i proceeding
2016

Wideband RF characterization setup with high dynamic range low frequency measurement capabilities

Sebastian Gustafsson, Christian Fager, Koen Buisman et al
2016 87th ARFTG Microwave Measurement Conference
Paper i proceeding
2016

Carbon-doped GaN on SiC materials for low-memory-effect devices

J. T. Chen, Erik Janzén, Niklas Rorsman et al
ECS Transactions. Vol. 75 (12), p. 61-65
Paper i proceeding
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Artikel i vetenskaplig tidskrift
2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Artikel i vetenskaplig tidskrift
2015

Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Artikel i vetenskaplig tidskrift
2015

Symmetry based nonlinear model for GaN HEMTs

Ankur Prasad, Mattias Thorsell, Klas Yhland et al
10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p. 85-88
Paper i proceeding
2015

High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes

Michael Winters, Mattias Thorsell, W. Strupinski et al
Applied Physics Letters. Vol. 107 (14)
Artikel i vetenskaplig tidskrift
2015

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, J. T. Chen, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Artikel i vetenskaplig tidskrift
2015

An Oscilloscope Correction Method for Vector-Corrected RF Measurements

Sebastian Gustafsson, Mattias Thorsell, Jörgen Stenarson et al
IEEE Transactions on Instrumentation and Measurement. Vol. 64 (9), p. 2541-2547
Artikel i vetenskaplig tidskrift
2015

Symmetry based Nonlinear Model for GaN

Ankur Prasad, Mattias Thorsell, Klas Yhland et al
2015 10th European Microwave Integrated Circuits Conference (Eumic), p. 85-88
Artikel i vetenskaplig tidskrift
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Artikel i vetenskaplig tidskrift
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3. Vol. 3
Paper i proceeding
2014

Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation

Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Artikel i vetenskaplig tidskrift
2014

Symmetrical modeling of GaN HEMTS

Ankur Prasad, Christian Fager, Mattias Thorsell et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2014

Symmetrical Large-Signal Modeling of Microwave Switch FETs

Ankur Prasad, Christian Fager, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (8), p. 1590-1598
Artikel i vetenskaplig tidskrift
2013

Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup

Paul Saad, Mattias Thorsell, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 23 (4), p. 220-222
Artikel i vetenskaplig tidskrift
2013

A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates

Michael Winters, Mattias Thorsell, J. ul Hassan et al
Materials Science Forum. Vol. 740-742, p. 129-132
Paper i proceeding
2013

Hybrid measurement-based extraction of consistent large-signal models for microwave FETs

Iltcho Angelov, Mattias Thorsell, Dan Kuylenstierna et al
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013, p. 267-270
Paper i proceeding
2013

A Novel Active Load-pull System with Multi-Band Capabilities

Sebastian Gustafsson, Mattias Thorsell, Christian Fager
81st ARFTG Microwave Measurement Conference
Paper i proceeding
2013

A novel technique for GaN HEMT trap states characterisation

P. Wright, Mattias Thorsell
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2013

Differential Impedance Measurement Method of RFID Transponder Chips at UHF

Markus Frank, Mattias Ferndahl, Mattias Thorsell et al
Proceedings of the 43rd European Microwave Conference. Vol. 2013, p. 68-71
Paper i proceeding
2012

Fast Multi Harmonic Active Load-Pull

Mattias Thorsell, Kristoffer Andersson
GigaHertz 2012 Symposium
Övrigt konferensbidrag
2012

Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities

Mattias Thorsell, Kristoffer Andersson
IEEE Transactions on Microwave Theory and Techniques. Vol. 60 (1), p. 149 - 157
Artikel i vetenskaplig tidskrift
2012

Noise temperature of an electronic tuner for noise parameter measurement systems

Olle Axelsson, Mattias Thorsell, Kristoffer Andersson et al
79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291197-
Paper i proceeding
2012

On the large-signal modeling of High Power AlGaN/GaN HEMTs

Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2012

A new baseband measurement system for characterization of memory effects in nonlinear microwave devices

Mattias Thorsell, Kristoffer Andersson
79th ARFTG Microwave Measurement Conference, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291190-
Paper i proceeding
2012

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Artikel i vetenskaplig tidskrift
2011

Electrothermal Access Resistance Model for GaN-Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Artikel i vetenskaplig tidskrift
2011

Large-signal waveform acquisition of pulsed signals

Kristoffer Andersson, Mattias Thorsell, G. Pailloncy et al
European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 41st European Microwave Conference, EuMC 2011, p. 9010-913
Paper i proceeding
2011

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Hiroshi Otsuka, Toshiyuki Oishi, Koji Yamanaka et al
International Journal of Microwave and Wireless Technologies. Vol. 3 (1), p. 25-33
Artikel i vetenskaplig tidskrift
2011

High efficiency RF pulse width modulation with tunable load network class-E PA

MUSTAFA ÖZEN, Christer Andersson, Mattias Thorsell et al
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011
Paper i proceeding
2011

Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers

Mattias Thorsell, Kristoffer Andersson, Guillaume Pailloncy et al
European Microwave Integrated Circuits Conference, 2009, p. 1-4
Paper i proceeding
2011

Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull

Christer Andersson, Mattias Thorsell, Niklas Rorsman
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (7), p. 1753-1760
Artikel i vetenskaplig tidskrift
2011

Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Guillaume Pailloncy et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (12), p. 1-8
Artikel i vetenskaplig tidskrift
2010

On the Compact Equivalent  Circuit  Modeling

Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson
APMC 2010 invited workshop. Vol. APMC 2010 invited workshop (APMC 2010 invited workshop)
Paper i proceeding
2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Artikel i vetenskaplig tidskrift
2010

Characterization of Electro-Thermal Effects in GaN Based HEMTs

Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Poster (konferens)
2010

On the Large Signal Evaluation and Modeling of GaN FET

Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
IEICE Transactions on Electronics. Vol. E93C (8), p. 1225-1233
Artikel i vetenskaplig tidskrift
2009

Active Harmonic Load-Pull using LSNA

Mattias Thorsell, Kristoffer Andersson
RF Measurement Technology for State of the Art Production and Design
Övrigt konferensbidrag
2009

Characterization Setup for Device Level Dynamic Load Modulation Measurements

Mattias Thorsell, Kristoffer Andersson, Christian Fager
International Microwave Symposium Digest, 2009, Boston
Paper i proceeding
2009

High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model

Hossein Mashad Nemati, Christian Fager, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (7), p. 1647-1654
Artikel i vetenskaplig tidskrift
2009

An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz

Paul Saad, Hossein Mashad Nemati, Mattias Thorsell et al
Microwave Conference, 2009. EuMC 2009. European, Sept. 29 2009-Oct. 1 2009, Rome, p. 496-499
Paper i proceeding
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Artikel i vetenskaplig tidskrift
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Artikel i vetenskaplig tidskrift
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper i proceeding
2008

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Artikel i vetenskaplig tidskrift
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Artikel i vetenskaplig tidskrift
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
International Microwave Symposium Digest, 2008, Atlanta, p. 463-466
Paper i proceeding

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Visar 5 forskningsprojekt

2023–2026

Affordable smart GaN IC solutions as enabler of greener applications (ALL2GaN)

Gregor Lasser Mikrovågselektronik
Christian Fager Mikrovågselektronik
Mattias Thorsell Mikrovågselektronik
Lucian Petrisor Ion Mikrovågselektronik
Hossein Zaheri Mikrovågselektronik
VINNOVA
Europeiska kommissionen (EU)

2019–2022

Kryogenisk GaN LNA med integrerad NbN supraledande blandare: kompakta THz detektorer för framtida Radio Astronomi mottagare

Vincent Desmaris Avancerad mottagarutveckling (GARD)
Mattias Thorsell Mikrovågselektronik
Victor Belitsky Avancerad mottagarutveckling (GARD)
Denis Meledin Avancerad mottagarutveckling (GARD)
Vetenskapsrådet (VR)

2016–2017

Kompakt Millimetervågsbyggsätt för Framtidens Kommunikations- och Sensorsystem (Förstudie)

Mattias Thorsell Mikrovågselektronik
Koen Buisman Mikrovågselektronik
Christian Fager Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
VINNOVA

2015–2018

Metrology for 5G communications MET5G

Koen Buisman Mikrovågselektronik
Mattias Thorsell Mikrovågselektronik
Thomas Eriksson Kommunikationssystem
European Association of National Metrology Institutes (EURAMET)

2 publikationer finns
2013–2017

Energieffektiva millimetervågssändare

Dan Kuylenstierna Mikrovågselektronik
Christian Fager Mikrovågselektronik
Herbert Zirath Mikrovågselektronik
Niklas Rorsman Mikrovågselektronik
William Hallberg Mikrovågselektronik
Mattias Thorsell Mikrovågselektronik
VINNOVA

1 publikation finns
Det kan finnas fler projekt där Mattias Thorsell medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.