Symmetrical modeling of GaN HEMTS
Paper i proceeding, 2014

This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures a symmetrical small signal model with lower modeling error. The small signal model can be further used to simplify the development of a large-signal model. The small signal model is validated with measured S- parameters of a commercial GaN HEMT.

Semiconductor device modeling

HEMTs

Modeling

Gallium Nitride

Parameters extraction

Författare

Ankur Prasad

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Christer Andersson

Mitsubishi Electric Corporation

Klas Yhland

SP Technical Research Institute of Sweden

Chalmers University of Technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

1550-8781 (ISSN)

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/CSICS.2014.6978581

ISBN

978-147993622-9