Symmetrical modeling of GaN HEMTS
Paper in proceeding, 2014
This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures a symmetrical small signal model with lower modeling error. The small signal model can be further used to simplify the development of a large-signal model. The small signal model is validated with measured S- parameters of a commercial GaN HEMT.
Semiconductor device modeling
Parameters extraction
Gallium Nitride
Modeling
HEMTs
Author
Ankur Prasad
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Christer Andersson
Mitsubishi Electric Corporation
Klas Yhland
GigaHertz Centre
SP Sveriges Tekniska Forskningsinstitut AB
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
1550-8781 (ISSN)
978-147993622-9 (ISBN)
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/CSICS.2014.6978581
ISBN
978-147993622-9