Mattias Thorsell
Senior Researcher at
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics
Showing 72 publications
2019
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier
Anna Malmros, P. Gamarra, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 66 (1), p. 364-371
Journal article
2019
Thermal characteristics of vertically-integrated GaN/SiC-on-Si assemblies: A comparative study
Kimmo Rasilainen, Per Ingelhag, Peter Melin et al
Proceedings - Electronic Components and Technology Conference. Vol. 2019-May, p. 1405-1412
Paper in proceedings
2018
Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential
Ankur Prasad, Mattias Thorsell, Herbert Zirath et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (2), p. 845-857
Journal article
2018
Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias
Johan Bremer, Lowisa Hanning, Niklas Rorsman et al
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference, p. 245-248
Paper in proceedings
2018
Differential Transmission Line Loop for RFID Reactive Near-Field Coupling
Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (5), p. 2141-2153
Journal article
2018
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers
Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Journal article
2018
A GaN-SiC hybrid material for high-frequency and power electronics
J. T. Chen, Johan Bergsten, Jun Lu et al
Applied Physics Letters. Vol. 113 (4)
Journal article
2018
Analysis of Thermal Effects in Integrated Radio Transmitters
Christian Fager, Mattias Thorsell, Emanuel Baptista et al
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Paper in proceedings
2018
Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias
Johan Bremer, Lowisa Hanning, Niklas Rorsman et al
2018 48th European Microwave Conference, EuMC 2018, p. 1213-1216
Paper in proceedings
2018
Analysis of Lateral Thermal Coupling for GaN MMIC Technologies
Johan Bremer, Johan Bergsten, Lowisa Hanning et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (10), p. 4430-4438
Journal article
2018
Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs
Tongde Huang, Johan Bergsten, Mattias Thorsell et al
IEEE Transactions on Electron Devices. Vol. 65 (3), p. 908-914
Journal article
2018
Optimizing the Signal-To-Noise and Distortion Ratio of a GaN LNA using Dynamic Bias
Lowisa Hanning, Johan Bremer, Marie Strom et al
. Vol. 1, p. 1-4
Paper in proceedings
2017
Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation
Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article
2017
Vector-corrected Nonlinear Multi-port IQ-mixer Characterization using Modulated Signals
Sebastian Gustafsson, Mattias Thorsell, Koen Buisman et al
IEEE MTT-S International Microwave Symposium Digest, p. 1433-1436
Paper in proceedings
2017
Lumped element balun with inherent complex impedance transformation
Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE MTT-S International Microwave Symposium Digest, p. 1285-1288
Paper in proceedings
2017
Design Equations for Lumped Element Balun With Inherent Complex Impedance Transformation
Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5162-5170
Journal article
2016
On the Modeling of High Power FET Transistors
Iltcho Angelov, Mattias Thorsell, Marcus Gavell et al
2016 11th European Microwave Integrated Circuits Conference (Eumic), London, England, Oct 03-04, 2016, p. 245-248
Paper in proceedings
2016
Carbon-doped GaN on SiC materials for low-memory-effect devices
J. T. Chen, Erik Janzén, Niklas Rorsman et al
ECS Transactions. Vol. 75 (12), p. 61-65
Paper in proceedings
2016
Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise
Olle Axelsson, Niklas Billström, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Journal article
2016
Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation
Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Journal article
2016
Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
Johan Bergsten, J. T. Chen, Sebastian Gustafsson et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 333-338
Journal article
2016
Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Journal article
2016
Shifted Source Impedance and Nonlinearity Impact on RFID Transponder Communication for Drive-Level Offsets
Markus Frank, Mattias Thorsell, Peter Enoksson
IEEE Transactions on Microwave Theory and Techniques. Vol. 64 (1), p. 299 - 309
Journal article
2016
Accurate Circuit Characterization Methods for mm‐Wave 5G Systems
Sebastian Gustafsson, Mattias Thorsell, Jörgen Stenarson et al
GigaHertz Symposium, March, Linköping
Conference contribution
2016
Wideband RF characterization setup with high dynamic range low frequency measurement capabilities
Sebastian Gustafsson, Christian Fager, Koen Buisman et al
2016 87th ARFTG Microwave Measurement Conference
Paper in proceedings
2015
Symmetry based nonlinear model for GaN HEMTs
Ankur Prasad, Mattias Thorsell, Klas Yhland et al
10th European Microwave Integrated Circuits Conference (EuMIC), 2015, p. 85-88
Paper in proceedings
2015
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Anna Malmros, P. Gamarra, M. A. di Forte-Poisson et al
IEEE Electron Device Letters. Vol. 36 (3), p. 235-237
Journal article
2015
An Oscilloscope Correction Method for Vector-Corrected RF Measurements
Sebastian Gustafsson, Mattias Thorsell, Jörgen Stenarson et al
IEEE Transactions on Instrumentation and Measurement. Vol. 64 (9), p. 2541-2547
Journal article
2015
Symmetry based Nonlinear Model for GaN
Ankur Prasad, Mattias Thorsell, Klas Yhland et al
2015 10th European Microwave Integrated Circuits Conference (Eumic), p. 85-88
Journal article
2015
Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application
Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3
Paper in proceedings
2015
The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs
Olle Axelsson, Mattias Thorsell, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Journal article
2015
High frequency electromagnetic detection by nonlinear conduction modulation in graphene nanowire diodes
Michael Winters, Mattias Thorsell, W. Strupinski et al
Applied Physics Letters. Vol. 107 (14)
Journal article
2015
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
Sebastian Gustafsson, J. T. Chen, Johan Bergsten et al
IEEE Transactions on Electron Devices. Vol. 62 (7), p. 2162-2169
Journal article
2015
Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition
Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2014
Symmetrical modeling of GaN HEMTS
Ankur Prasad, Christian Fager, Mattias Thorsell et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2014
Symmetrical Large-Signal Modeling of Microwave Switch FETs
Ankur Prasad, Christian Fager, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (8), p. 1590-1598
Journal article
2014
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Anna Malmros, P. Gamarra, Mattias Thorsell et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 11 (3-4), p. 924-927
Paper in proceedings
2013
A Novel Active Load-pull System with Multi-Band Capabilities
Sebastian Gustafsson, Mattias Thorsell, Christian Fager
81st ARFTG Microwave Measurement Conference
Paper in proceedings
2013
Differential Impedance Measurement Method of RFID Transponder Chips at UHF
Markus Frank, Mattias Ferndahl, Mattias Thorsell et al
Proceedings of the 43rd European Microwave Conference. Vol. 2013, p. 68-71
Paper in proceedings
2013
A novel technique for GaN HEMT trap states characterisation
P. Wright, Mattias Thorsell
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2013
A DC Comparison Study Between H-Intercalated and Native epigraphenes on SiC substrates
Michael Winters, Mattias Thorsell, J. ul Hassan et al
Materials Science Forum. Vol. 740-742, p. 129-132
Paper in proceedings
2013
Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup
Paul Saad, Mattias Thorsell, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 23 (4), p. 220-222
Journal article
2013
Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
Iltcho Angelov, Mattias Thorsell, Dan Kuylenstierna et al
43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013, p. 267-270
Paper in proceedings
2012
Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities
Mattias Thorsell, Kristoffer Andersson
IEEE Transactions on Microwave Theory and Techniques. Vol. 60 (1), p. 149 - 157
Journal article
2012
Fast Multi Harmonic Active Load-Pull
Mattias Thorsell, Kristoffer Andersson
GigaHertz 2012 Symposium
Conference contribution
2012
A new baseband measurement system for characterization of memory effects in nonlinear microwave devices
Mattias Thorsell, Kristoffer Andersson
79th ARFTG Microwave Measurement Conference, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291190-
Paper in proceedings
2012
Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 59 (12), p. 3344-3349
Journal article
2012
Noise temperature of an electronic tuner for noise parameter measurement systems
Olle Axelsson, Mattias Thorsell, Kristoffer Andersson et al
79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291197-
Paper in proceedings
2012
On the large-signal modeling of High Power AlGaN/GaN HEMTs
Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
IEEE MTT-S International Microwave Symposium Digest
Paper in proceedings
2011
Using the Best Linear Approximation to Model the Nonlinear Behavior of Supply Modulated Amplifiers
Mattias Thorsell, Kristoffer Andersson, Guillaume Pailloncy et al
European Microwave Integrated Circuits Conference, 2009, p. 1-4
Paper in proceedings
2011
Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Mattias Thorsell, Kristoffer Andersson, Guillaume Pailloncy et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (12), p. 1-8
Journal article
2011
Nonlinear Characterization of Varactors for Tunable Networks by Active Source-Pull and Load-Pull
Christer Andersson, Mattias Thorsell, Niklas Rorsman
IEEE Transactions on Microwave Theory and Techniques. Vol. 59 (7), p. 1753-1760
Journal article
2011
Semi-physical nonlinear circuit model with device/physical parameters for HEMTs
Hiroshi Otsuka, Toshiyuki Oishi, Koji Yamanaka et al
International Journal of Microwave and Wireless Technologies. Vol. 3 (1), p. 25-33
Journal article
2011
Electrothermal Access Resistance Model for GaN-Based HEMTs
Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 58 (2), p. 466 - 472
Journal article
2011
Large-signal waveform acquisition of pulsed signals
Kristoffer Andersson, Mattias Thorsell, G. Pailloncy et al
European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 41st European Microwave Conference, EuMC 2011, p. 9010-913
Paper in proceedings
2011
Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices
Mattias Thorsell
Doctoral thesis
2011
High efficiency RF pulse width modulation with tunable load network class-E PA
MUSTAFA ÖZEN, Christer Andersson, Mattias Thorsell et al
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011
Paper in proceedings
2010
On the Large Signal Evaluation and Modeling of GaN FET
Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson et al
IEICE Transactions on Electronics. Vol. E93C (8), p. 1225-1233
Journal article
2010
On the Compact Equivalent Circuit Modeling
Iltcho Angelov, Mattias Thorsell, Kristoffer Andersson
APMC 2010 invited workshop. Vol. APMC 2010 invited workshop (APMC 2010 invited workshop)
Paper in proceedings
2010
An X-Band AlGaN/GaN MMIC Receiver Front-End
Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Journal article
2010
Characterization of Electro-Thermal Effects in GaN Based HEMTs
Mattias Thorsell, Kristoffer Andersson, Hans Hjelmgren et al
5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Conference poster
2009
Characterization Setup for Device Level Dynamic Load Modulation Measurements
Mattias Thorsell, Kristoffer Andersson, Christian Fager
International Microwave Symposium Digest, 2009, Boston
Paper in proceedings
2009
An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz
Paul Saad, Hossein Mashad Nemati, Mattias Thorsell et al
Microwave Conference, 2009. EuMC 2009. European, Sept. 29 2009-Oct. 1 2009, Rome, p. 496-499
Paper in proceedings
2009
High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model
Hossein Mashad Nemati, Christian Fager, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (7), p. 1647-1654
Journal article
2009
Thermal Study of the High-Frequency Noise in GaN HEMTs
Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Journal article
2009
Active Harmonic Load-Pull using LSNA
Mattias Thorsell, Kristoffer Andersson
RF Measurement Technology for State of the Art Production and Design
Conference contribution
2009
Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters
Mattias Thorsell
Licentiate thesis
2008
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Mattias Sudow, Hossein Mashad Nemati, Mattias Thorsell et al
IEEE Electron Device Letters. Vol. 29 (7), p. 728-730
Journal article
2008
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008
Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
International Microwave Symposium Digest, 2008, Atlanta, p. 463-466
Paper in proceedings
2008
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Journal article
2008
A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer
Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Journal article
Showing 4 research projects
2019–2022
Cryogenic GaN LNA with integrated NbN superconducting mixers: compact THz detectors for future radioastronomy receivers
Vincent Desmaris
GARD Technology
Victor Belitsky
GARD Technology
Mattias Thorsell
Microwave Electronics
Denis Meledin
GARD Technology
Swedish Research Council (VR)
2016–2017
Compact Millimeter Wave Integration Concept for Future Wireless and Sensor Systems
Mattias Thorsell
Microwave Electronics
Christian Fager
Microwave Electronics
Niklas Rorsman
Microwave Electronics
Koen Buisman
Microwave Electronics
VINNOVA
2015–2018
Metrology for 5G communications MET5G
Koen Buisman
Microwave Electronics
Mattias Thorsell
Microwave Electronics
Thomas Eriksson
Communication Systems
European Association of National Metrology Institutes (EURAMET)
2013–2017
Energy efficient millimeter wave transmitters
Christian Fager
Microwave Electronics
Niklas Rorsman
Microwave Electronics
Dan Kuylenstierna
Microwave Electronics
William Hallberg
Microwave Electronics
Herbert Zirath
Microwave Electronics
Mattias Thorsell
Microwave Electronics
VINNOVA
There might be more projects where Mattias Thorsell participates, but you have to be logged in as a Chalmers employee to see them.