Short Term Drift in the Recovery Time of GaN HEMT Switches
Paper in proceeding, 2024
A step stress characterization method is proposed to enable the study of the gradual degradation of memory effect-induced recovery in GaN HEMT switches. This is achieved by characterizing the transition from off- to on-state over time and tracking short-term degradation in the recovery of the insertion loss for decreasing off-state voltages. The method is demonstrated on three different technologies. The results show that the degradation varies between foundry processes, illustrating the merit of the method for evaluating the impact of memory effects in GaN HEMT switch operation.
Gallium nitride (GaN)
HEMT
MMIC
switch
Author
Andreas Divinyi
Saab
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Billström
Saab
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Saab
2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024
6-9
9782874870781 (ISBN)
19th European Microwave Integrated Circuits Conference, EuMIC 2024
Paris, France,
Paris, France,
Development of the national infrastructure for microwave and terahertz characterization: expanding the use of the electromagnetic spectrum
Swedish Research Council (VR) (2020-06187), 2021-01-01 -- 2024-12-31.
Subject Categories (SSIF 2011)
Manufacturing, Surface and Joining Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.23919/EuMIC61603.2024.10732079