Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Journal article, 2011
gallium nitride (GaN)
linear characteristics
high electron-mobility transistors (HEMTs)
Linear approximation
nonlinear distortion
Author
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Guillaume Pailloncy
Yves Rolain
Vrije Universiteit Brussel (VUB)
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 59 12 1-8 6061918Areas of Advance
Information and Communication Technology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TMTT.2011.2169423