Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Artikel i vetenskaplig tidskrift, 2011
In this paper, the best linear approximation (BLA) is extended to include second-order nonlinearities. This extension is particularly useful for the analysis of low-frequency (LF) distortion due to self-mixing. The self-mixing of a modulated signal due to even-order nonlinear distortion creates a spectrum around dc, as well as around the high order even harmonics. The frequency response at dc can be used to determine long-term memory effects such as trapping and self-heating. The extended BLA is extracted for a GaN-based HEMT to analyze the LF distortion and demonstrate the possibilities with the proposed method.
gallium nitride (GaN)
linear characteristics
high electron-mobility transistors (HEMTs)
Linear approximation
nonlinear distortion
Författare
Mattias Thorsell
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Kristoffer Andersson
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Guillaume Pailloncy
Yves Rolain
Vrije Universiteit Brüssel (VUB)
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 59 12 1-8 6061918Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/TMTT.2011.2169423