Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Artikel i vetenskaplig tidskrift, 2011

In this paper, the best linear approximation (BLA) is extended to include second-order nonlinearities. This extension is particularly useful for the analysis of low-frequency (LF) distortion due to self-mixing. The self-mixing of a modulated signal due to even-order nonlinear distortion creates a spectrum around dc, as well as around the high order even harmonics. The frequency response at dc can be used to determine long-term memory effects such as trapping and self-heating. The extended BLA is extracted for a GaN-based HEMT to analyze the LF distortion and demonstrate the possibilities with the proposed method.

gallium nitride (GaN)

linear characteristics

high electron-mobility transistors (HEMTs)

Linear approximation

nonlinear distortion


Mattias Thorsell


Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Kristoffer Andersson


Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Guillaume Pailloncy

Yves Rolain

Vrije Universiteit Brüssel (VUB)

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN) 15579670 (eISSN)

Vol. 59 12 1-8 6061918


Informations- och kommunikationsteknik


Annan elektroteknik och elektronik



Mer information

Senast uppdaterat