Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer
Paper in proceeding, 2020

The ever-increasing requirements for high device performance and compact size drive the communications industry to lookfor new materials, technologies, and integration concepts. This simulation-based study investigates the thermal properties of a compact, heterogeneously integrated gallium nitride on silicon carbide (GaN-on-SiC) and silicon (Si) assembly. Thermal simulations and parametric studies are used to determine how the heat spreading and temperature levels in the lateral and vertical directions are affected by the thickness of the SiC layer and the distribution of the thermal interconnects. Results show that a SiC layer thinned down to 100 μm shows more pronounced differences in its thermal characteristics compared to thicker ones, especially in terms of its backside heating. Aspects related to practical implementations are also considered.

Author

Kimmo Rasilainen

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

University of Oulu

Torbjurn M.J. Nilsson

University of Oulu

Saab

Johan Bremer

University of Oulu

Mattias Thorsell

University of Oulu

Christian Fager

University of Oulu

2020 26th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2020 - Proceedings

9420503

26th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2020
Virtual, Berlin, Germany,

Compact Millimeter Wave Integration Concept for Future Wireless and Sensor Systems

VINNOVA (2017-01898), 2017-09-01 -- 2019-08-31.

Subject Categories

Energy Engineering

Other Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/THERMINIC49743.2020.9420503

More information

Latest update

6/9/2021 1