Thermal analysis of GaN/SiC-on-Si assemblies: Effect of bump pitch and thickness of SiC Layer
Paper i proceeding, 2020

The ever-increasing requirements for high device performance and compact size drive the communications industry to lookfor new materials, technologies, and integration concepts. This simulation-based study investigates the thermal properties of a compact, heterogeneously integrated gallium nitride on silicon carbide (GaN-on-SiC) and silicon (Si) assembly. Thermal simulations and parametric studies are used to determine how the heat spreading and temperature levels in the lateral and vertical directions are affected by the thickness of the SiC layer and the distribution of the thermal interconnects. Results show that a SiC layer thinned down to 100 μm shows more pronounced differences in its thermal characteristics compared to thicker ones, especially in terms of its backside heating. Aspects related to practical implementations are also considered.

Författare

Kimmo Rasilainen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Oulun Yliopisto

Torbjurn M.J. Nilsson

Oulun Yliopisto

Saab

Johan Bremer

Oulun Yliopisto

Mattias Thorsell

Oulun Yliopisto

Christian Fager

Oulun Yliopisto

2020 26th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2020 - Proceedings

9420503

26th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2020
Virtual, Berlin, Germany,

Kompakt Millimetervågsbyggsätt för Framtidens Kommunikations- och Sensorsystem

VINNOVA (2017-01898), 2017-09-01 -- 2019-08-31.

Ämneskategorier

Energiteknik

Annan materialteknik

Annan elektroteknik och elektronik

DOI

10.1109/THERMINIC49743.2020.9420503

Mer information

Senast uppdaterat

2021-06-09