An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz
Paper in proceedings, 2009

This paper presents the design and implementation of an inverse class F power amplifier (PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78 %, a drain efficiency of 82 %, a gain of 12 dB, and an output power of 11W. Moreover, drain efficiency is maintained over 60 % and the output power level is higher than 10W over 300 MHz bandwidth. To our knowledge, the presented power amplifier represents the highest efficiency for all switching mode PAS that have been reported for high power applications at frequencies above 2 GHz.

drain efficiency

HEMT transistor

inverse class F power amplifier

HEMT power amplifier

high electron mobility transistors

Author

Paul Saad

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Hossein Mashad Nemati

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Christian Fager

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Microwave Conference, 2009. EuMC 2009. European, Sept. 29 2009-Oct. 1 2009, Rome

496-499

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-4748-0

More information

Created

10/8/2017