An Inverse Class-F GaN HEMT Power Amplifier with 78% PAE at 3.5 GHz
Paper i proceeding, 2009

This paper presents the design and implementation of an inverse class F power amplifier (PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78 %, a drain efficiency of 82 %, a gain of 12 dB, and an output power of 11W. Moreover, drain efficiency is maintained over 60 % and the output power level is higher than 10W over 300 MHz bandwidth. To our knowledge, the presented power amplifier represents the highest efficiency for all switching mode PAS that have been reported for high power applications at frequencies above 2 GHz.

drain efficiency

HEMT transistor

inverse class F power amplifier

HEMT power amplifier

high electron mobility transistors

Författare

Paul Saad

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Hossein Mashad Nemati

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Christian Fager

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Microwave Conference, 2009. EuMC 2009. European, Sept. 29 2009-Oct. 1 2009, Rome

496-499

Ämneskategorier

Annan elektroteknik och elektronik

ISBN

978-1-4244-4748-0

Mer information

Skapat

2017-10-08