An X-Band AlGaN/GaN MMIC Receiver Front-End
Journal article, 2010

This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver front-end. The receiver uses an integrated SPDT switch to reduce size, weight and cost compared to circulator based transceiver front-ends. The integrated front-end has more than 13 dB of gain and a noise figure of 3.5 dB at 11 GHz.

AlGaN/GaN HEMT LNA MMIC noise receiver switch transceiver

Author

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Niklas Billström

Saab AB

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 20 1 55-57

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/LMWC.2009.2035968

More information

Latest update

9/6/2018 1