Martin Fagerlind

Publications (23)
Projects (0)

Showing 23 publications

2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al

Solid-State Electronics. Vol. 87, p. 85-89

Journal article

2013

On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications

J. ul Hassan, I. Booker, L. Lilja et al

Materials Science Forum. Vol. 740-742, p. 173-176

Paper in proceeding

2012

Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

Martin Fagerlind

Doctoral thesis

2012

Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Martin Fagerlind, Niklas Rorsman

Journal of Applied Physics. Vol. 112 (1), p. Art. no. 014511-

Journal article

2012

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Martin Fagerlind, I. Booker, P. Bergman et al

IEEE Transactions on Device and Materials Reliability. Vol. 12 (3), p. 538-546

Journal article

2011

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Martin Fagerlind, Niklas Rorsman

Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2204-2206

Journal article

2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al

IEEE Electron Device Letters. Vol. 32 (7), p. 889-891

Journal article

2010

IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING

Martin Fagerlind, Niklas Rorsman

The 34th Workshop on Compound Semiconductor Devices and Integrated Circuits

Paper in proceeding

2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al

IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57

Journal article

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al

Journal of Applied Physics. Vol. 108 (1)

Journal article

2009

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Martin Fagerlind, Herbert Zirath, Niklas Rorsman

Semiconductor Science and Technology. Vol. 24 (4), p. 045014-

Journal article

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, P. Waltereit et al

Microelectronics and Reliability. Vol. 49 (5), p. 474-477

Journal article

2009

Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

Martin Fagerlind

Licentiate thesis

2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26

Journal article

2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al

GigaHertz Symposium 2008, p. 78-

Paper in proceeding

2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833

Journal article

2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al

Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20

Paper in proceeding

2008

Influence of gate position on dispersion characteristics of GaN HEMTs

Martin Fagerlind, Herbert Zirath, Urban Forsberg et al

WOCSDICE 2008, Abstract book, p. 99-100

Paper in proceeding

2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206

Journal article

2008

GaN MMIC power amplifiers for S-band and X- band

Erwin M. Suijker, Mattias Sudow, Martin Fagerlind et al

38th European Microwave Conference, EuMC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008, p. 297-300

Paper in proceeding

2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al

Gigahertz Symposium 2008, Abstract book, p. 86-

Paper in proceeding

2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al

International Microwave Symposium Digest, 2008, Atlanta, p. 463-466

Paper in proceeding

2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Mikael Malmkvist et al

WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103

Other conference contribution

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