Martin Fagerlind

Showing 23 publications

2013

On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications

J. ul Hassan, I. Booker, L. Lilja et al
Materials Science Forum. Vol. 740-742, p. 173-176
Journal article
2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al
Solid-State Electronics. Vol. 87, p. 85-89
Journal article
2012

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Martin Fagerlind, I. Booker, P. Bergman et al
IEEE Transactions on Device and Materials Reliability. Vol. 12 (3), p. 538-546
Magazine article
2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al
IEEE Electron Device Letters. Vol. 32 (7), p. 889-891
Journal article
2011

Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures

Martin Fagerlind, Niklas Rorsman
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2204-2206
Journal article
2010

IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING

Martin Fagerlind, Niklas Rorsman
The 34th Workshop on Compound Semiconductor Devices and Integrated Circuits
Paper in proceedings
2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al
Journal of Applied Physics. Vol. 108 (1)
Journal article
2010

An X-Band AlGaN/GaN MMIC Receiver Front-End

Mattias Thorsell, Martin Fagerlind, Kristoffer Andersson et al
IEEE Microwave and Wireless Components Letters. Vol. 20 (1), p. 55-57
Journal article
2009

A room temperature HEMT process for AlGaN/GaN heterostructure characterization

Martin Fagerlind, Herbert Zirath, Niklas Rorsman
Semiconductor Science and Technology. Vol. 24 (4), p. 045014-
Journal article
2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, P. Waltereit et al
Microelectronics and Reliability. Vol. 49 (5), p. 474-477
Journal article
2009

Thermal Study of the High-Frequency Noise in GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 57 (1), p. 19-26
Journal article
2008

Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008., p. 17-20
Paper in proceedings
2008

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell, Kristoffer Andersson, Martin Fagerlind et al
International Microwave Symposium Digest, 2008, Atlanta, p. 463-466
Paper in proceedings
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper in proceedings
2008

GaN MMIC power amplifiers for S-band and X- band

Erwin M. Suijker, Mattias Sudow, Martin Fagerlind et al
38th European Microwave Conference, EuMC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008, p. 297-300
Paper in proceedings
2008

An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Mattias Sudow, Martin Fagerlind, Mattias Thorsell et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (8), p. 1827-1833
Journal article
2008

GaN Device and MMIC development at Chalmers

Martin Fagerlind, Mattias Sudow, Kristoffer Andersson et al
Gigahertz Symposium 2008, Abstract book, p. 86-
Paper in proceedings
2008

Influence of gate position on dispersion characteristics of GaN HEMTs

Martin Fagerlind, Herbert Zirath, Urban Forsberg et al
WOCSDICE 2008, Abstract book, p. 99-100
Paper in proceedings
2008

A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer

Mattias Sudow, Kristoffer Andersson, Martin Fagerlind et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (10), p. 2201-2206
Journal article
2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Mikael Malmkvist et al
WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103
Conference contribution

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