GaN MMIC power amplifiers for S-band and X- band
Paper in proceedings, 2008

The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 ?m HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.

Author

Erwin M. Suijker

Netherlands Organisation for Applied Scientific Research (TNO)

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A. P. De Hek

Netherlands Organisation for Applied Scientific Research (TNO)

F. E. Van Vliet

Netherlands Organisation for Applied Scientific Research (TNO)

38th European Microwave Conference, EuMC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008

297-300 4751447

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/EUMC.2008.4751447

ISBN

978-287487006-4

More information

Latest update

4/10/2018