GaN MMIC power amplifiers for S-band and X- band
Paper in proceeding, 2008
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 ?m HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.
Author
Erwin M. Suijker
Netherlands Organisation for Applied Scientific Research (TNO)
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. P. De Hek
Netherlands Organisation for Applied Scientific Research (TNO)
F. E. Van Vliet
Netherlands Organisation for Applied Scientific Research (TNO)
38th European Microwave Conference, EuMC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008
297-300 4751447
978-287487006-4 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/EUMC.2008.4751447
ISBN
978-287487006-4