Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
Doctoral thesis, 2012
HFET
passivation characterization
passivation
AlGaN/GaN heterostructure
Author
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures
Physica Status Solidi (C) Current Topics in Solid State Physics,;Vol. 8(2011)p. 2204-2206
Journal article
A room temperature HEMT process for AlGaN/GaN heterostructure characterization
Semiconductor Science and Technology,;Vol. 24(2009)p. 045014-
Journal article
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Journal of Applied Physics,;Vol. 108(2010)
Journal article
Areas of Advance
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-91-7385-652-2
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 3333
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 218
Kollektorn, MC2, Kemivägen 9, Göteborg
Opponent: Enrico Zanoni