Thermal Study of the High-Frequency Noise in GaN HEMTs
Journal article, 2009

The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297–398 K. The access resistances ${ R}_{ S}$ and ${ R}_{ D}$ have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a ${hbox{2}}times {hbox{100}} mu{hbox{m}}$ GaN HEMT. ${ R}_{ S}$ and ${ R}_{ D}$ show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.

Gallium nitride (GaN) modeling noise temperature measurement thermal resistance

Author

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 57 1 19-26

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TMTT.2008.2009084

More information

Created

10/7/2017