Thermal Study of the High-Frequency Noise in GaN HEMTs
Journal article, 2009

The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297–398 K. The access resistances ${ R}_{ S}$ and ${ R}_{ D}$ have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a ${hbox{2}}times {hbox{100}} mu{hbox{m}}$ GaN HEMT. ${ R}_{ S}$ and ${ R}_{ D}$ show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.

Gallium nitride (GaN) modeling noise temperature measurement thermal resistance

Author

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IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 57 1 19-26

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TMTT.2008.2009084

More information

Created

10/7/2017