Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Journal article, 2009
Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.
transistors
Author
M. Dammann
Fraunhofer Society
W. Pletschen
Fraunhofer Society
P. Waltereit
Fraunhofer Society
W. Bronner
Fraunhofer Society
R. Quay
Fraunhofer Society
S. Muller
Fraunhofer Society
M. Mikulla
Fraunhofer Society
O. Ambacher
Fraunhofer Society
P. J. van der Wel
NXP Semiconductors Netherlands
S. Murad
NXP Semiconductors Netherlands
T. Rodle
NXP Semiconductors Netherlands
R. Behtash
United Monolithic Semiconductors
F. Bourgeois
United Monolithic Semiconductors
K. Riepe
United Monolithic Semiconductors
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Microelectronics and Reliability
0026-2714 (ISSN)
Vol. 49 5 474-477Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.microrel.2009.02.005